@article{oai:kyutech.repo.nii.ac.jp:00000168,
 author = {Takahashi, Y and Satake, Akihiro and 佐竹, 昭泰 and Fujiwawra, Kenzo and Shue, J.K and Jahn, U and Kostial, H and Grahn, H.T},
 issue = {2-4},
 journal = {Physica E: Low-dimensional Systems and Nanostructures},
 month = {Mar},
 note = {Abstract: Temperature dependence of the EL spectral intensity is investigated between 20 and 300 K of a particularly designedblue (In,Ga)N/GaN multiple-quantum-well (MQW) light-emitting-diode (LED), which contains an additionally n-doped(In,Ga)N electron reservoir layer. The MQW-LED consists of In0.3Ga0.7N MQW layers with a nominal well width of 2.5 nmseparated by 6.5 nm GaN barrier layers, prepared by metal-organic vapor-phase epitaxy with and without an n-doped In0.18Ga0.82Nelectron reservoir layer in order to exploit the effects of such additional layer on the carrier capture rates. It is found that by addingthe electron reservoir layer, the EL spectral intensity is significantly enhanced over the wide temperature range for a fixed injectioncurrent level. These results indicate importance of the electron capture processes by radiative recombination centers in the InGaNMQW.},
 pages = {876--880},
 title = {Enhanced Radiative Efficiency in Blue (In,Ga)N Multiple-Quantum-Well Light-Emitting Diodes with an Electron Reservoir Layer},
 volume = {21},
 year = {2004},
 yomi = {サタケ, アキヒロ}
}