@article{oai:kyutech.repo.nii.ac.jp:00000171,
 author = {Tanigawa, K and Fujiwara, Kenzo and 藤原, 賢三 and Sano, N},
 journal = {Journal of Crystal Growth},
 month = {Apr},
 note = {Ultra-low frequency photocurrent (PC) self-oscillation has been investigated in aIn0.15Ga0.85As/Al0.15Ga0.85As quantum-well (QW) diode in details as a function of temperature,excitation power and wavelength. The PC oscillation frequency increases with increasing temperatureand illumination power at excitation wavelengths below the leading n = 1 heavy-hole excitonresonance line under reverse bias conditions. The illumination wavelength dependence shows a clearevidence for beating due to two oscillators when photoexcitation by shorter wavelength below 1050nm is used. These results suggest that the low-frequency PC self-oscillation with a characteristicfrequency of about 0.01-0.1 Hz is caused by oscillating electric fields due to two-types ofphotogenerated charge carriers trapped at deep localized centers within the QW regions.},
 pages = {902--905},
 title = {Ultra-low frequency photocurrent self-oscillation in strained InxGa1-xAs quantum well diodes},
 volume = {301-302},
 year = {2007},
 yomi = {フジワラ, ケンゾウ}
}