{"created":"2023-05-15T11:56:28.537994+00:00","id":1742,"links":{},"metadata":{"_buckets":{"deposit":"efc47db1-515f-498c-8ddf-336206a56b4c"},"_deposit":{"created_by":3,"id":"1742","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1742"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00001742","sets":["8:9"]},"author_link":["7222","7217","219","574","7218","7219"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-11-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"1127","bibliographicPageStart":"1124","bibliographicVolumeNumber":"256","bibliographic_titles":[{"bibliographic_title":"Applied Surface Science"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The phase conversion of amorphous solid water (ASW) to crystalline ice (CI) has been investigated in the very thin (~10 monolayers) film regime on a Ru(0 0 1) surface. We analyze the converted CI fraction with the Avrami model, and recognize that one-dimensional CI growth occurs, which can be contrasted to the three-dimensional CI growth generally established in the thick (≥50 monolayers) film regime. We evaluate activation energy for the ASW crystallization to be about 1.0 eV. We suggest that the ASW crystallization is not influenced by the substrate even near the substrate–ice interface.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"7222","nameIdentifierScheme":"WEKO"}],"names":[{"name":"山内, 貴志"}]}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.apsusc.2009.05.098","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Crown copyright © 2009 Published by Elsevier B.V."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0169-4332","subitem_source_identifier_type":"ISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Electrical Engineering and Electronics, Kyushu Institute of Technology"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"D2A9C7FBD278E76749257688003A916C"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yamauchi, T"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mine, K"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakashima, Y"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Izumi, Akira","creatorNameLang":"en"},{"creatorName":"和泉, 亮","creatorNameLang":"ja"},{"creatorName":"イズミ, アキラ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Namiki, Akira","creatorNameLang":"en"},{"creatorName":"並木, 章","creatorNameLang":"ja"},{"creatorName":"ナミキ, アキラ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2009-12-10"}],"displaytype":"detail","filename":"ASS1124.pdf","filesize":[{"value":"341.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ASS1124.pdf","url":"https://kyutech.repo.nii.ac.jp/record/1742/files/ASS1124.pdf"},"version_id":"8a1f3ee0-cd4c-4b5b-9f3c-1e77735335cd"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Ruthenium","subitem_subject_scheme":"Other"},{"subitem_subject":"Crystallization","subitem_subject_scheme":"Other"},{"subitem_subject":"Amorphous solid water","subitem_subject_scheme":"Other"},{"subitem_subject":"Infrared spectrum","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Crystallization of D2O thin films on Ru(0 0 1) surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Crystallization of D2O thin films on Ru(0 0 1) surfaces"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-12-10"},"publish_date":"2009-12-10","publish_status":"0","recid":"1742","relation_version_is_last":true,"title":["Crystallization of D2O thin films on Ru(0 0 1) surfaces"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:41:08.501982+00:00"}