| アイテムタイプ |
学術雑誌論文 = Journal Article(1) |
| 公開日 |
2023-08-03 |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| タイトル |
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タイトル |
Investigation of the Parasitic Inductance Influence on the Short-Circuit Behaviour of High Voltage IGBTs |
|
言語 |
en |
| 言語 |
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|
言語 |
eng |
| 著者 |
Du, He
大村, 一郎
Matsumoto, Shuhei
Arai, Takuro
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
This paper comprehensively investigates the high voltage insulated-gate bipolar transistor (IGBT) under short-circuit conditions, focusing on the impact of parasitic inductance. At first, the typical short-circuit performance of a 4.5 kV IGBT at different bias voltages is presented and the high equivalent parasitic inductance for the single-chip test is highlighted. Then, an appropriate bias voltage and fixed pulse time are selected as the test condition and the short circuit tests are performed with different values of parasitic inductance. The results show different gate-emitter voltage waveforms and short-circuit time durations. For comparison, the short-circuit test results of a 1.2 kV IGBT with different parasitic inductances are also included, which show consistent gate and current behaviour. A detailed analysis based on the TCAD simulation is included to explain this phenomenon. |
| 備考 |
|
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内容記述タイプ |
Other |
|
内容記述 |
2023 IEEE Applied Power Electronics Conference and Exposition (APEC 2023), March 19-23, 2023, Orlando, FL, USA |
| 書誌情報 |
2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
p. 2451-2455,
発行日 2023-05-31
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| 出版社 |
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出版者 |
IEEE |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1109/APEC43580.2023.10131377 |
| ISBN |
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識別子タイプ |
ISBN |
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関連識別子 |
978-1-6654-7539-6 |
| ISBN |
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識別子タイプ |
ISBN |
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関連識別子 |
978-1-6654-7538-9 |
| ISBN |
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識別子タイプ |
ISBN |
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|
関連識別子 |
978-1-6654-7540-2 |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2470-6647 |
| ISSN |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
1048-2334 |
| 著作権関連情報 |
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権利情報 |
Copyright (c) 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| キーワード |
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主題Scheme |
Other |
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主題 |
IGBT |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
short circuit |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
reliability |
| キーワード |
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|
主題Scheme |
Other |
|
主題 |
parasitic inductance |
| キーワード |
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|
主題Scheme |
Other |
|
主題 |
TCAD simulation |
| 出版タイプ |
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|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 査読の有無 |
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|
値 |
yes |
nperc235.pdf (1.6 MB)
