| アイテムタイプ |
学術雑誌論文 = Journal Article(1) |
| 公開日 |
2023-09-28 |
| 資源タイプ |
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|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| タイトル |
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|
タイトル |
Spontaneous Polarization and Polarization-Induced Electron Sheet Charge of YbAlN on GaN: A First-Principles Study |
|
言語 |
en |
| その他のタイトル |
|
|
その他のタイトル |
Spontaneous polarization and polarization-induced electron sheet charge of YbAlN on GaN: A first-principles study |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 著者 |
Hirata, Kenji
河野, 翔也
Yamada, Hiroshi
Uehara, Masato
Anggraini, Sri Ayu
Akiyama, Morito
|
| 抄録 |
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|
内容記述タイプ |
Abstract |
|
内容記述 |
The high spontaneous polarization in scandium-doped AlN (ScAlN) is being actively investigated for applications to various electronic devices. In this study, spontaneous polarization of ytterbium-doped AlN (YbxAl1–xN) was investigated by first-principles calculations. The magnitude of spontaneous polarization increases with increasing Yb concentration and reaches the maximum value of −0.3 C/m2 at x = 0.5, which is comparable with that of ScAlN. Moreover, the results revealed the correlation between the lattice-constant ratio (c/a) of the wurtzite structure and spontaneous polarization. The value of spontaneous polarization is affected by the length of the Yb–N bonds along the c-axis in the wurtzite structure. The shorter Yb–N bonds compared with Al–N bonds and higher Born effective charge of Yb compared with Al are considered to be the main factors for the high spontaneous polarization of YbAlN. The polarization-induced electron sheet charge in YbAlN/GaN heterostructures is estimated to be comparable with that in ScAlN/GaN. These results suggest that YbAlN is a promising barrier layer for GaN-based high-electron-mobility transistors. At low Yb concentration, the lattice mismatch between YbxAl1–xN and the GaN buffer layer is very small. The polarization-induced interface sheet charge is affected by the sum of the spontaneous and piezoelectric polarization. In the case of YbAlN/GaN, the piezoelectric polarization is suppressed to a low level, and the effect of spontaneous polarization increases and leads to higher polarization-induced interface sheet charge. |
|
言語 |
en |
| 書誌情報 |
en : ACS Applied Electronic Materials
巻 4,
号 9,
p. 4772-4780,
発行日 2022-09-15
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| 出版社 |
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出版者 |
American Chemical Society |
| DOI |
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|
関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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|
関連識別子 |
https://doi.org/10.1021/acsaelm.2c00995 |
| ISSN |
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|
収録物識別子タイプ |
EISSN |
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収録物識別子 |
2637-6113 |
| 著作権関連情報 |
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|
権利情報 |
This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in ACS Applied Electronic Materials, Copyright (c) American Chemical Society after peer review. To access the final edited and published work, see https://doi.org/10.1021/acsaelm.2c00995. |
| キーワード |
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主題Scheme |
Other |
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主題 |
first-principles calculation |
| キーワード |
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主題Scheme |
Other |
|
主題 |
spontaneous polarization |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
piezoelectricity |
| キーワード |
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|
主題Scheme |
Other |
|
主題 |
high-electron-mobility transistors |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
nitrides |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 査読の有無 |
|
|
値 |
yes |
| 研究者情報 |
|
|
URL |
https://hyokadb02.jimu.kyutech.ac.jp/html/100001323_ja.html |
10405021.pdf (1.3 MB)
