WEKO3
アイテム
A testing method for evaluating shoot-through immunity of IGBTs in an inverter
http://hdl.handle.net/10228/0002000308
http://hdl.handle.net/10228/0002000308c2d6293c-de07-4627-97fb-9072e1b2db25
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nperc191.pdf (513 KB)
|
|
| Item type | 学術雑誌論文 = Journal Article(1) | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2023-12-06 | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| タイトル | ||||||||||||
| タイトル | A testing method for evaluating shoot-through immunity of IGBTs in an inverter | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 著者 |
Hasegawa, K.
× Hasegawa, K.
× 安部, 征哉× Tsukuda, M.
× 大村, 一郎× Ninomiya, T.
|
|||||||||||
| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | The shoot-through fault in inverters results from a gate noise voltage of power semiconductor switches including IGBTs. Testing the gate voltage under the high-speed switching event is important to evaluate immunity to the fault as well as to analyze the mechanism of the fault. This paper presents a testing method of shoot-through immunity in a PWM inverter consisting of IGBTs because the conventional double-pulse test can miss the shoot-through fault in the inverter. Theoretical analysis reveals that the N-base charge has influence on the gate-emitter voltage in the IGBT, which disturbs evaluating the shoot-through immunity in the inverter. This implies that IGBTs have a different characteristic from MOSFETs when the double-pulse test is carried out. The testing method introduces an additional pulse into the off-state IGBT to release the N-base charge, the circuit operation of which is the same as the inverter. Experimental results confirmed that the method did not affected by the N-base voltage, so that it is applicable to testing the shoot-through immunity of IGBTs in an inverter. | |||||||||||
| 言語 | en | |||||||||||
| 書誌情報 |
en : Microelectronics Reliability 巻 126, p. 114289, 発行日 2021-12-06 |
|||||||||||
| 出版社 | ||||||||||||
| 出版者 | Elsevier | |||||||||||
| DOI | ||||||||||||
| 関連タイプ | isVersionOf | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | https://doi.org/10.1016/j.microrel.2021.114289 | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||
| 収録物識別子 | 1872-941X | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||
| 収録物識別子 | 0026-2714 | |||||||||||
| 著作権関連情報 | ||||||||||||
| 権利情報 | Copyright (c) 2021 Elsevier Ltd. All rights reserved. | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | AM | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
| 査読の有無 | ||||||||||||
| 値 | yes | |||||||||||
