@article{oai:kyutech.repo.nii.ac.jp:02000625,
 author = {Sharma, Shubham and Pandey, Manish and Nagamatsu, Shuichi and 永松, 秀一 and Tanaka, Hirofumi and 田中, 啓文 and Takashima, Kazuto and 髙嶋, 一登 and Nakamura, Masakazu and Pandey, Shyam Sudhir and パンディ, シャム スディル},
 issue = {17},
 journal = {ACS Applied Materials & Interfaces},
 month = {Apr},
 note = {Nonvolatile organic memristors have emerged as promising candidates for next-generation electronics, emphasizing the need for vertical device fabrication to attain a high density. Herein, we present a comprehensive investigation of high-performance organic memristors, fabricated in crossbar architecture with PTB7/Al-AlOx-nanocluster/PTB7 embedded between Al electrodes. PTB7 films were fabricated using the Unidirectional Floating Film Transfer Method, enabling independent uniform film fabrication in the Layer-by-Layer (LbL) configuration without disturbing underlying films. We examined the charge transport mechanism of our memristors using the Hubbard model highlighting the role of Al-AlOx-nanoclusters in switching-on the devices, due to the accumulation of bipolarons in the semiconducting layer. By varying the number of LbL films in the device architecture, the resistance of resistive states was systematically altered, enabling the fabrication of novel multilevel memristors. These multilevel devices exhibited excellent performance metrics, including enhanced memory density, high on–off ratio (>108), remarkable memory retention (>105 s), high endurance (87 on–off cycles), and rapid switching (∼100 ns). Furthermore, flexible memristors were fabricated, demonstrating consistent performance even under bending conditions, with a radius of 2.78 mm for >104 bending cycles. This study not only demonstrates the fundamental understanding of charge transport in organic memristors but also introduces novel device architectures with significant implications for high-density flexible applications.},
 pages = {22282--22293},
 title = {High-Density, Nonvolatile, Flexible Multilevel Organic Memristor Using Multilayered Polymer Semiconductors},
 volume = {16},
 year = {2024}
}