{"created":"2024-05-13T02:52:02.511688+00:00","id":2000625,"links":{},"metadata":{"_buckets":{"deposit":"b29ee10c-42ac-4262-b509-89c3ea062701"},"_deposit":{"created_by":14,"id":"2000625","owner":"14","owners":[14],"pid":{"revision_id":0,"type":"depid","value":"2000625"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:02000625","sets":["8:24"]},"author_link":["1670","22854","26196","6311"],"control_number":"2000625","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2024-04-21","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"17","bibliographicPageEnd":"22293","bibliographicPageStart":"22282","bibliographicVolumeNumber":"16","bibliographic_titles":[{"bibliographic_title":"ACS Applied Materials & Interfaces","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Nonvolatile organic memristors have emerged as promising candidates for next-generation electronics, emphasizing the need for vertical device fabrication to attain a high density. Herein, we present a comprehensive investigation of high-performance organic memristors, fabricated in crossbar architecture with PTB7/Al-AlOx-nanocluster/PTB7 embedded between Al electrodes. PTB7 films were fabricated using the Unidirectional Floating Film Transfer Method, enabling independent uniform film fabrication in the Layer-by-Layer (LbL) configuration without disturbing underlying films. We examined the charge transport mechanism of our memristors using the Hubbard model highlighting the role of Al-AlOx-nanoclusters in switching-on the devices, due to the accumulation of bipolarons in the semiconducting layer. By varying the number of LbL films in the device architecture, the resistance of resistive states was systematically altered, enabling the fabrication of novel multilevel memristors. These multilevel devices exhibited excellent performance metrics, including enhanced memory density, high on–off ratio (>108), remarkable memory retention (>105 s), high endurance (87 on–off cycles), and rapid switching (∼100 ns). Furthermore, flexible memristors were fabricated, demonstrating consistent performance even under bending conditions, with a radius of 2.78 mm for >104 bending cycles. This study not only demonstrates the fundamental understanding of charge transport in organic memristors but also introduces novel device architectures with significant implications for high-density flexible applications.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_link_62":{"attribute_name":"研究者情報","attribute_value_mlt":[{"subitem_link_url":"https://hyokadb02.jimu.kyutech.ac.jp/html/328_ja.html"}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"American Chemical Society","subitem_publisher_language":"en"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1021/acsami.4c03111","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2024 American Chemical Society. This publication is licensed under CC-BY 4.0.","subitem_rights_resource":"https://creativecommons.org/licenses/by/4.0/"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1944-8244","subitem_source_identifier_type":"PISSN"},{"subitem_source_identifier":"1944-8252","subitem_source_identifier_type":"EISSN"}]},"item_21_text_28":{"attribute_name":"論文ID（連携）","attribute_value_mlt":[{"subitem_text_value":"10430484"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"12259"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sharma, 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啓文","creatorNameLang":"ja"}],"familyNames":[{},{}],"givenNames":[{},{}],"nameIdentifiers":[{"nameIdentifier":"22854","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90373191","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000090373191"},{"nameIdentifier":"55628563135","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=55628563135"},{"nameIdentifier":"0000-0002-4378-5747","nameIdentifierScheme":"ORCiD","nameIdentifierURI":"https://orcid.org/0000-0002-4378-5747"},{"nameIdentifier":"100000720","nameIdentifierScheme":"九工大研究者情報","nameIdentifierURI":"https://hyokadb02.jimu.kyutech.ac.jp/html/##_ja.html"}]},{"creatorNames":[{"creatorName":"Takashima, Kazuto","creatorNameLang":"en"},{"creatorName":"髙嶋, 一登","creatorNameLang":"ja"}],"familyNames":[{},{}],"givenNames":[{},{}],"nameIdentifiers":[{"nameIdentifier":"26196","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"30435656","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000030435656"},{"nameIdentifier":"8672747900","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=8672747900"},{"nameIdentifier":"0000-0002-3304-4443","nameIdentifierScheme":"ORCiD","nameIdentifierURI":"https://orcid.org/0000-0002-3304-4443"},{"nameIdentifier":"328","nameIdentifierScheme":"九工大研究者情報","nameIdentifierURI":"https://hyokadb02.jimu.kyutech.ac.jp/html/##_ja.html"}]},{"creatorNames":[{"creatorName":"Nakamura, Masakazu","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Pandey, Shyam Sudhir","creatorNameLang":"en"},{"creatorName":"パンディ, シャム 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