| アイテムタイプ |
学術雑誌論文 = Journal Article(1) |
| 公開日 |
2024-05-29 |
| 資源タイプ |
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|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| タイトル |
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|
タイトル |
New equations to calculate carrier recombination lifetime of silicon epitaxial layer, based on open circuit voltage decay method |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 著者 |
Sasaki, Shun
Mitsugi, Noritomo
Samata, Shuichi
Manabe, Wataru
Gollapudi, Srikanth
Tsukuda, Masanori
大村, 一郎
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
New equations for recombination lifetime calculation based on the open circuit voltage decay (OCVD) method were proposed. The new equations can yield accurate recombination lifetime values of the i-layer of PiN diodes in which a silicon epitaxial layer is employed, by eliminating the effects of carrier diffusion into p+ and n+ layers from the i-layer of PiN diodes, carrier injection into the i-layers from the depletion layer of PiN diodes, and surface recombination on the side wall of PiN diodes. To verify the effectiveness of the new equations, OCVD measurements were performed by employing technology computer-aided design (TCAD) simulation and actual PiN diodes. Although the calculated values implied the effect of epitaxial layer thickness, they were consistent with the results obtained under assumed lifetime conditions for TCAD simulation, the theory of recombination lifetime, and results in other reports. |
|
言語 |
en |
| 書誌情報 |
en : Japanese Journal of Applied Physics
巻 62,
号 11,
p. 111001,
発行日 2023-11-14
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| 出版社 |
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出版者 |
応用物理学会 |
|
言語 |
ja |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.35848/1347-4065/ad034d |
| NCID |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA12295836 |
| ISSN |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0021-4922 |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
1347-4065 |
| 著作権関連情報 |
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|
権利情報 |
Copyright (c) 2023 The Japan Society of Applied Physics |
| 出版タイプ |
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|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 査読の有無 |
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|
値 |
yes |
nperc242.pdf (940 KB)
