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アイテム
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
http://hdl.handle.net/10228/0002000743
http://hdl.handle.net/10228/0002000743c353172a-5ef5-4b53-bc17-e2e4cc107221
| 名前 / ファイル | ライセンス | アクション |
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nperc247.pdf (2.2 MB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||||||||
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| 公開日 | 2024-06-07 | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| タイトル | ||||||||||||
| タイトル | Paralleling of IGBT Power Semiconductor Devices and Reliability Issues | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 著者 |
トリパシ, ラビ ナス
× トリパシ, ラビ ナス
WEKO
35480
× 大村, 一郎 |
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | Paralleling of power semiconductor devices is inevitable considering their widespread application and exploitation in the extended horizon of these applications. However, paralleling of power semiconductor devices is prone to severe unbalancing corresponding to the non-idealities of device parameters, which leads to non-identical dynamic and static characteristics of the power devices, as well as the operating conditions and aging. Therefore, the currents are generally non-uniform and cause the derating of the system. This paper discusses and analyzes issues associated with the paralleling of IGBT power devices, which can evoke serious reliability issues. Furthermore, the paper examines the techniques and methodologies that have been proposed to reduce the issue of current unbalancing of parallel-connected power devices. | |||||||||||
| 言語 | en | |||||||||||
| 書誌情報 |
en : Electronics 巻 12, 号 18, p. 3826, 発行日 2023-09-10 |
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| 出版社 | ||||||||||||
| 出版者 | MDPI | |||||||||||
| DOI | ||||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | https://doi.org/10.3390/electronics12183826 | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||
| 収録物識別子 | 2079-9292 | |||||||||||
| 著作権関連情報 | ||||||||||||
| 権利情報Resource | https://creativecommons.org/licenses/by/4.0/ | |||||||||||
| 権利情報 | Copyright (c) 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). | |||||||||||
| キーワード | ||||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | power semiconductor device | |||||||||||
| キーワード | ||||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | paralleling | |||||||||||
| キーワード | ||||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | current unbalancing | |||||||||||
| キーワード | ||||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | reliability | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 査読の有無 | ||||||||||||
| 値 | yes | |||||||||||
