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Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current
http://hdl.handle.net/10228/0002000745
http://hdl.handle.net/10228/000200074513918007-5b3f-4206-b7d2-83ae30c3808e
| 名前 / ファイル | ライセンス | アクション |
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nperc249.pdf (772 KB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2024-06-07 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
長谷川, 一徳
× 長谷川, 一徳
WEKO
28366
× Takagi, Kai
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | This letter reveals the effect of the reverse-recovery current of a PIN diode on the surge and gate-noise voltages of an insulated-gate bipolar transistor (IGBT) in an inverter. Theoretical analysis reveals that the di/dt of the reverse-recovery current, the switching speed of the IGBT, and parasitic inductances affect the gate-noise voltage unlike a Schottky barrier diode because resonance does not occur due to junction capacitances. The analysis also indicates that the surge voltage may not occur when the dc voltage is increased even though a large amount of surge voltage occurs in a low dc voltage region. A 1-kV testing setup was designed and constructed using a 1.7-kV 260-A IGBT module, which confirms the validity of the theoretical analysis. | |||||||||||||
| 言語 | en | |||||||||||||
| 書誌情報 |
en : IEEE Transactions on Power Electronics 巻 38, 号 7, p. 8051-8055, 発行日 2023-04-20 |
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| 出版社 | ||||||||||||||
| 出版者 | IEEE | |||||||||||||
| DOI | ||||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1109/TPEL.2023.3268673 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||||
| 収録物識別子 | 0885-8993 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||||
| 収録物識別子 | 1941-0107 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright (c) 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Gate-noise voltage | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | insulated-gate bipolar transistors | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | inverters | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | PIN diodes | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | reverse-recovery current | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | surge voltage | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
