| アイテムタイプ |
共通アイテムタイプ(1) |
| 公開日 |
2025-08-07 |
| タイトル |
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タイトル |
Implication of Surface Passivation on the In-Plane Charge Transport in the Oriented Thin Films of P3HT |
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言語 |
en |
| 著者 |
Nisarg Hirens Purabiarao,
Kumar Vivek Gaurav,
Shubham Sharma,
安藤, 義人
パンディ, シャム スディル
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| 著作権関連情報 |
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権利情報Resource |
https://creativecommons.org/licenses/by/4.0/ |
|
権利情報 |
Copyright (c) 2025 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
|
言語 |
en |
| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Optimizing charge transport in organic semiconductors is crucial for advancing next-generation optoelectronic devices. The performance of organic field-effect transistors (OFETs) is significantly influenced by the alignment of films in the channel direction and the quality of the dielectric surface, which should be uniform, smooth, and free of charge-trapping defects. Our study reports the enhancement of OFET performance using large-area, uniform, and oriented thin films of regioregular poly[3-hexylthiophene] (RR-P3HT), prepared via the Floating Film Transfer Method (FTM) on octadecyltrichlorosilane (OTS) passivated SiO2 surfaces. SiO2 surfaces inherently possess dangling bonds that act as charge traps, but these can be effectively passivated through optimized surface treatments. OTS treatment has improved the optical anisotropy of thin films and the surface wettability of SiO2. Notably, using octadecene as a solvent during OTS passivation, as opposed to toluene, resulted in a significant enhancement of charge carrier transport. Specifically, passivation with OTS-F (10 mM OTS in octadecene at 100 °C for 48 h) led to a >150 times increase in mobility and a reduction in threshold voltage compared to OTS-A (5 mM OTS in toluene for 12 h at room temperature). Under optimal conditions, these FTM-processed RR-P3HT films achieved the best device performance, with a saturated mobility (μsat) of 0.18 cm2V−1s−1. |
|
言語 |
en |
| 書誌情報 |
en : Electronic Materials
巻 6,
号 2,
p. 6020006,
発行日 2025-05-07
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| 出版社 |
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出版者 |
MDPI |
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言語 |
en |
| キーワード |
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|
言語 |
en |
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主題Scheme |
Other |
|
主題 |
floating film transfer method |
| キーワード |
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|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
octadecyl trichlorosilane |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
self-assembled monolayer |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
RR-P3HT |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
organic field effect transistors |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 出版タイプ |
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|
出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.3390/electronicmat6020006 |
| 助成情報 |
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|
助成機関名 |
文部科学省 (MEXT) |
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|
言語 |
ja |
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|
助成機関名 |
Ministry of Education, Culture, Sports, and Science (MEXT) |
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言語 |
en |
| ISSN |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2673-3978 |
| 研究者情報 |
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|
URL |
https://hyokadb02.jimu.kyutech.ac.jp/html/332_ja.html |
| 論文ID（連携） |
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|
値 |
10461827 |
| 連携ID |
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|
値 |
14786 |
10461827.pdf (893.8 KB)
