@article{oai:kyutech.repo.nii.ac.jp:00000231,
 author = {Satake, Akihiro and 佐竹, 昭泰 and Hori, A and Takahashi, Y and Yasunaga, D and Fujiwara, Kenzo and 藤原, 賢三},
 journal = {Journal of Physics: Conference Series},
 month = {},
 note = {Temperature dependence of electroluminescence (EL) spectraof the super-bright green InGaN single-quantum-well (SQW) lightemittingdiode (LED) has been studied over a wide temperature range(T=15-300 K) and as a function of injection current level. The ELintensity efficiently increases due to reduced non-radiativerecombination processes when temperature is slightly decreased to 140 Kfrom 300 K. However, with further decrease of temperature down to 15K, it drastically decreases due to the reduced carrier capture. In order topursue origins of the EL quenching at low temperatures, bilateral electricfield dependence of the quantum efficiency have been studied at 15 K byphotoluminescence (PL) measurements. It is found that the PL intensitygradually decreases with increasing the reverse bias voltage down to –10V due to tunneling escape of the carrier out of the well. On the otherhand, while the PL intensity increases with increasing the forward biasvoltage up to 2 V, however, drastic reduction of the PL intensity isobserved with further increase of the forward bias voltage up to 4.25 V.This PL quenching in both field directions means that spatial separationof the electron and holes plays an important role in the EL efficiencybecause of the existence of large internal piezoelectric and spontaneousfield. These results suggest that both internal and external field effectsare crucial to the unique temperature dependence of the EL efficiency.},
 title = {Asymmetric external electric field effects on luminescence intensity of InGaN single-quantum-well light-emitting diode},
 volume = {171},
 year = {2003},
 yomi = {サタケ, アキヒロ and フジワラ, ケンゾウ}
}