@article{oai:kyutech.repo.nii.ac.jp:00000245,
 author = {Satake, Akihiro and 佐竹, 昭泰 and Hayata, K and Shiraishi, N and Fujiwara, Kenzo and 藤原, 賢三 and Schrottke, L and Hey, R and Grahn, H.T},
 journal = {Institute of Physics conference series},
 month = {},
 note = {We have investigated the effect of different cladding layer configurations on the photoluminescence (PL) properties of GaAs triple quantum wells (QWs) with different well thicknesses (Lz=7.8, 5.5, and 3.5 nm) embedded in Al0.17Ga0.83As barriers. In sample 1, the cladding layers consist of ternary alloy Al0.3Ga0.7As layers, while in sample 2 they are formed by GaAs/AlAs short period superlattices. At low temperatures, the cw PL spectra for sample 1 show a non-uniform intensity distribution over the three QW excitionic lines. The PL intensity for the widest QW (7.8 nm) is much weaker than that for the other QWs. Furthermore, an anomalous temperature dependence of the PL transients of the widest QW is observed, which differs from the one expected for the excitonic radiative recombination lifetime. However, sample 2 exhibits the typical temperature dependence of the PL lifetime. The temperature dependence of the PL dynamics indicates that the non-uniform distribution of the PL intensity at low temperatures in the former sample is a result of a competition between carrier relaxation and capture processes.},
 pages = {473--478},
 title = {Anomalous temperature dependence of the photoluminescence properties in GaAs triple quantum wells with growth islands},
 volume = {170},
 year = {2002},
 yomi = {サタケ, アキヒロ and フジワラ, ケンゾウ}
}