@article{oai:kyutech.repo.nii.ac.jp:00000246,
 author = {Jahn, U and Dhar, S and Waltereit, P and Kostial, H and Watson, IM and Fujiwara, Kenzo and 藤原, 賢三},
 journal = {Institute of Physics conference series},
 month = {},
 note = {The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD vary significantly during investigations using low-energy electron beam irradiation (LEEBI) such as cathodoluminescence (CL) if a certain exposure dose is exceeded. For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increases significantly by LEEBI. A p-n structure is turned towards flat band conditions during LEEBI indicating an electron beam induced passivation of acceptors in the p-type layer.},
 pages = {337--340},
 title = {Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures},
 volume = {180},
 year = {2003},
 yomi = {フジワラ, ケンゾウ}
}