{"created":"2023-05-15T11:55:21.358978+00:00","id":246,"links":{},"metadata":{"_buckets":{"deposit":"959f97c2-c1ee-4936-be46-fd750634c169"},"_deposit":{"created_by":3,"id":"246","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"246"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000246","sets":["8:9"]},"author_link":["1203","1204","1205","1138","1206","1202"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"340","bibliographicPageStart":"337","bibliographicVolumeNumber":"180","bibliographic_titles":[{"bibliographic_title":"Institute of Physics conference series"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD vary significantly during investigations using low-energy electron beam irradiation (LEEBI) such as cathodoluminescence (CL) if a certain exposure dose is exceeded. For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increases significantly by LEEBI. A p-n structure is turned towards flat band conditions during LEEBI indicating an electron beam induced passivation of acceptors in the p-type layer.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{"familyName":"Fujiwara","familyNameLang":"en"},{"familyName":"藤原","familyNameLang":"ja"},{"familyName":"フジワラ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Kenzo","givenNameLang":"en"},{"givenName":"賢三","givenNameLang":"ja"},{"givenName":"ケンゾウ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"1138","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90243980","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000090243980"},{"nameIdentifier":"7403468236","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=7403468236"}],"names":[{"name":"Fujiwara, Kenzo","nameLang":"en"},{"name":"藤原, 賢三","nameLang":"ja"},{"name":"フジワラ, ケンゾウ","nameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.iop.org/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.iop.org/","subitem_relation_type_select":"URI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (c) 2003 IOP Publishing Ltd"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Jahn, U"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Dhar, S"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Waltereit, P"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kostial, H"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Watson, IM"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-12-11"}],"displaytype":"detail","filename":"Cam-Paper.pdf","filesize":[{"value":"123.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Cam-Paper.pdf","url":"https://kyutech.repo.nii.ac.jp/record/246/files/Cam-Paper.pdf"},"version_id":"86a27784-a0a7-4fbf-b5fb-24e8cf72dc3f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"MG","subitem_subject_scheme":"Other"},{"subitem_subject":"IRRADIATION","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-12-11"},"publish_date":"2007-12-11","publish_status":"0","recid":"246","relation_version_is_last":true,"title":["Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:43:16.701067+00:00"}