{"created":"2023-05-15T11:55:23.096687+00:00","id":289,"links":{},"metadata":{"_buckets":{"deposit":"94576669-79d0-4436-9ab6-3516730afff1"},"_deposit":{"created_by":3,"id":"289","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"289"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000289","sets":["8:24"]},"author_link":["1443","1138","1441"],"control_number":"289","item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-12-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"113105-7","bibliographicPageStart":"113105-1","bibliographicVolumeNumber":"100","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The temperature dependence of the electroluminescence (EL) spectral intensity has been investigated in detail between T=20 and 300  K at various injection current levels for a set of two blue InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with and without an additional n-doped In0.18Ga0.82N electron reservoir layer (ERL). The radiative recombination efficiency of the main blue emission band (~480  nm) is found to be significantly improved at all temperature regions and current levels when the additional ERL is introduced. For high injection currents If, i.e., large forward bias voltages Vf, a quenching of the EL intensity is observed for T<100  K for both LED structures, accompanying appearance of short-wavelength satellite emissions around 380–430  nm. Furthermore, the low-temperature intensity reduction of the main EL band is stronger for the LED without the ERL than with the ERL. For low If, i.e., small Vf, however, no quenching of the EL intensity is observed for both LEDs even below 100  K and the short-wavelength satellite emissions are significantly reduced. These results of the main blue emission and the short-wavelength satellite bands imply that the unusual evolution of the EL intensity with temperature and current is caused by variations of the actual potential field distribution due to both internal and external fields. They significantly influence the carrier capture efficiency by radiative recombination centers within the active MQW layer and the carrier escape out of the active regions into high-energy recombination centers responsible for the short-wavelength satellite emissions.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{"familyName":"Fujiwara","familyNameLang":"en"},{"familyName":"藤原","familyNameLang":"ja"},{"familyName":"フジワラ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Kenzo","givenNameLang":"en"},{"givenName":"賢三","givenNameLang":"ja"},{"givenName":"ケンゾウ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"1138","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90243980","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000090243980"},{"nameIdentifier":"7403468236","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=7403468236"}],"names":[{"name":"Fujiwara, Kenzo","nameLang":"en"},{"name":"藤原, 賢三","nameLang":"ja"},{"name":"フジワラ, ケンゾウ","nameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.2398690","subitem_relation_type_select":"DOI"}}]},"item_21_relation_66":{"attribute_name":"論文ID（NAID）","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"120002440717","subitem_relation_type_select":"NAID"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © 2006 American Institute of Physics. The following article has been submitted to/accepted by Journal of Applied Physics. After it is published, it will be found at https://aip.scitation.org/journal/jap."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan"},{"subitem_text_value":"Department of Electrical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan"},{"subitem_text_value":"Institute of Electro-Optical Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Otsuji, N","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Fujiwara, Kenzo","creatorNameLang":"en"},{"creatorName":"藤原, 賢三","creatorNameLang":"ja"},{"creatorName":"フジワラ, ケンゾウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Sheu, J.K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2007-12-20"}],"displaytype":"detail","filename":"1.2398690.pdf","filesize":[{"value":"501.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1.2398690.pdf","url":"https://kyutech.repo.nii.ac.jp/record/289/files/1.2398690.pdf"},"version_id":"af9e98b6-7545-4b01-abf7-9c1f74905386"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"indium compounds","subitem_subject_scheme":"Other"},{"subitem_subject":"wide band gap semiconductors","subitem_subject_scheme":"Other"},{"subitem_subject":"gallium compounds","subitem_subject_scheme":"Other"},{"subitem_subject":"III-V semiconductors","subitem_subject_scheme":"Other"},{"subitem_subject":"light emitting diodes","subitem_subject_scheme":"Other"},{"subitem_subject":"electroluminescence","subitem_subject_scheme":"Other"},{"subitem_subject":"radiation quenching","subitem_subject_scheme":"Other"},{"subitem_subject":"quantum well devices","subitem_subject_scheme":"Other"},{"subitem_subject":"semiconductor quantum wells","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-12-20"},"publish_date":"2007-12-20","publish_status":"0","recid":"289","relation_version_is_last":true,"title":["Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-10-25T08:28:03.735994+00:00"}