@article{oai:kyutech.repo.nii.ac.jp:00000300,
 author = {Sago, Genki and Li, Wanyan and Keisuke, Goto and Ichikawa, Yo and Ishida, Yoshihisa and Kohiki, Shigemi and 古曵, 重美},
 issue = {8},
 journal = {Journal of Applied Physics},
 month = {Oct},
 note = {The threshold of photoelectron emission was measured for amorphous CNx films deposited at room temperature (RT) and at 500  °C. The x values of the films deposited at RT and at 500  °C by magnetron sputtering of a graphite target in a mixed N2/Ar gas were 0.6 and 0.3, respectively. Ratios of the sp2- to sp3-hybridized components of both C and N for the film deposited at 500  °C were larger by 4 times than those for the film deposited at RT. The onsets of the electron emission by photon irradiation were 5.0 and 4.7  eV for the films deposited at RT and at 500  °C, respectively.},
 pages = {4674--4676},
 title = {Threshold of photoelectron emission from CNx films deposited at room temperature and at 500  °C},
 volume = {96},
 year = {2004},
 yomi = {コヒキ, シゲミ}
}