@article{oai:kyutech.repo.nii.ac.jp:00000321,
 author = {Yasukawa, Masahiro and Ikeuchi, Kaoru and Kono, Toshio and Ueda, Kazushige and 植田, 和茂 and Hosono, Hideo},
 issue = {1},
 journal = {Journal of Applied Physics},
 month = {Jul},
 note = {The thermoelectric properties of delafossite-type layered oxides AgIn1–xSnxO2 that consist of alternating layers of Ag and In1–xSnxO2 were investigated to elucidate their potential as a thermoelectric material. Polycrystalline materials of the AgIn1–xSnxO2 were prepared by a cation exchange reaction between NaIn1–xSnxO2 and AgCl. The solubility limit of the Sn atoms on the In sites was approximately x=0.05. The electrical conductivity and Seebeck coefficient were measured between 373 and 673  K in air. Undoped AgInO2 was an n-type semiconductor with conductivities of 10–4–10–2  –1  cm–1, and the electron carriers were generated via the formation of oxygen vacancies. AgIn0.95Sn0.05O2 was an n-type degenerate semiconductor with conductivities of 100–101  –1  cm–1 where the Sn atoms acted as electron donors. This drastic increase in the electrical conductivity increased the thermoelectric power factor by approximately two orders of magnitude to 10–6–10–5  W  m–1  K–2.},
 pages = {013706-1--013706-4},
 title = {Thermoelectric properties of delafossite-type layered oxides AgIn1–xSnxO2},
 volume = {98},
 year = {2005},
 yomi = {ウエダ, カズシゲ}
}