@article{oai:kyutech.repo.nii.ac.jp:00000323,
 author = {Morie, Takashi and 森江, 隆 and Matsuura, Tomohiro and Miyata, Satoshi and Yamanaka, Toshio and Nagata, Makoto and Iwata, Atsushi},
 issue = {5-6},
 journal = {Superlattices and Microstructures},
 month = {May},
 note = {Two types of quantum dot circuits measuring a Hamming distance using theCoulomb repulsion effect are proposed and analyzed. They have structures wherea quantum dot array is arranged on a gate electrode of an ultrasmall MOSFET.The device parameters for successful operation are clarified from Monte-Carlosimulation.},
 pages = {613--616},
 title = {Quantum-dot structures measuring Hamming distance for associative memories},
 volume = {27},
 year = {2000},
 yomi = {モリエ, タカシ}
}