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Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln = La, Pr, and Nd; Ch = S or Se) semiconductor alloys
http://hdl.handle.net/10228/573
http://hdl.handle.net/10228/573a057dcfd-6195-492f-b3eb-baf344588357
| 名前 / ファイル | ライセンス | アクション |
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128.pdf (196.3 kB)
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| アイテムタイプ | 学術雑誌論文 = Journal Article(1) | |||||||||||||
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| 公開日 | 2007-12-27 | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln = La, Pr, and Nd; Ch = S or Se) semiconductor alloys | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 著者 |
Hiramatsu, Hidenori
× Hiramatsu, Hidenori× 植田, 和茂
WEKO
579
× Takafuji, Kouhei× Ohta, Hiromichi× Hirano, Masahiro× Kamiyama, Toshio× Hosono, Hideo |
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | The optical spectroscopic properties of layered oxychalcogenide semiconductors LnCuOCh (Ln = La, Pr, and Nd; Ch = S or Se) on epitaxial films were thoroughly investigated near the fundamental energy band edges. Free exciton emissions were observed for all the films between 300 and ~30 K. In addition, a sharp emission line, which was attributed to bound excitons, appeared below ~80 K. The free exciton energy showed a nonmonotonic relationship with lattice constant and was dependent on lanthanide and chalcogen ion substitutions. These results imply that the exciton was confined to the (Cu2Ch2)2– layer. Anionic and cationic substitutions tune the emission energy at 300 K from 3.21 to 2.89 eV and provide a way to engineer the electronic structure in light-emitting devices. | |||||||||||||
| 書誌情報 |
Journal of Applied Physics 巻 94, 号 9, p. 5805-5808, 発行日 2003-11-01 |
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| 出版社 | ||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||
| DOI | ||||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | https://doi.org/10.1063/1.1618932 | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 0003-6951 | |||||||||||||
| 著作権関連情報 | ||||||||||||||
| 権利情報 | Copyright © 2003 American Institute of Physics | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | excitons | |||||||||||||
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| 主題Scheme | Other | |||||||||||||
| 主題 | photoluminescence | |||||||||||||
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| 主題Scheme | Other | |||||||||||||
| 主題 | energy gap | |||||||||||||
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| 主題Scheme | Other | |||||||||||||
| 主題 | semiconductor epitaxial layers | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | wide band gap semiconductors | |||||||||||||
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| 主題Scheme | Other | |||||||||||||
| 主題 | copper compounds | |||||||||||||
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| 主題Scheme | Other | |||||||||||||
| 主題 | rare earth compounds | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | VoR | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||
| 査読の有無 | ||||||||||||||
| 値 | yes | |||||||||||||
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| 識別子タイプ | URI | |||||||||||||
| 関連識別子 | http://www.aip.org/ | |||||||||||||
| 関連名称 | http://www.aip.org/ | |||||||||||||
