{"created":"2023-05-15T11:57:41.255559+00:00","id":3411,"links":{},"metadata":{"_buckets":{"deposit":"0dc5fa97-24a3-4cc3-a167-541eff8b22ce"},"_deposit":{"created_by":3,"id":"3411","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"3411"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00003411","sets":["8:24"]},"author_link":["13680","13682","13683","13681","13047","13679"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-12-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageStart":"6259","bibliographicVolumeNumber":"96","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Surface roughness and undulation of unpatterned silicon wafers are serious issues for ultralarge-scale-integrated circuit devices, even after fine mechanochemical polishing. It has never been clarified whether the undulations exist only on the surface or also exist inside the bulk crystal. We produced grazing incident diffraction topographs at three x-ray photon energies, with penetration depths estimated to be 3.85 nm, 4.78 nm, and 1.28 µm. All the topographs contained striation. We also obtained clear total reflection images using synchrotron x-ray plane waves, which also showed striation patterns at penetration depths from 3.85 nm to 1.28 µm. These results indicate that the origin of the patterns is not at the surface but is inside the Si wafer. The origin of striation patterns, observed in the topographs, was found not to be due to mechanochemical polishing processes but to crystal growth.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[]}],"familyNames":[{"familyName":"Suzuki","familyNameLang":"en"},{"familyName":"鈴木","familyNameLang":"ja"},{"familyName":"スズキ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Yoshifumi","givenNameLang":"en"},{"givenName":"芳文","givenNameLang":"ja"},{"givenName":"ヨシフミ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"13047","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10206550","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000010206550"},{"nameIdentifier":"55724538400","nameIdentifierScheme":"Scopus著者ID","nameIdentifierURI":"https://www.scopus.com/authid/detail.uri?authorId=55724538400"}],"names":[{"name":"Suzuki, Yoshifumi","nameLang":"en"},{"name":"鈴木, 芳文","nameLang":"ja"},{"name":"スズキ, ヨシフミ","nameLang":"ja-Kana"}]}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.1812354","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"©2004 American Institute of Physics"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Faculty of Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"Faculty of Engineering, Kyushu Institute of Technology"},{"subitem_text_value":"Japan Synchrotron Research Institute"},{"subitem_text_value":"Rigaku Corporation"},{"subitem_text_value":"Faculty of Science, Toyama University"},{"subitem_text_value":"Faculty of Engineering, Kyushu Institute of Technology"}]},"item_21_text_64":{"attribute_name":"業績ID","attribute_value_mlt":[{"subitem_text_value":"2A50628E266FFF56492576BE000F8CD1"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Suzuki, Yoshifumi","creatorNameLang":"en"},{"creatorName":"鈴木, 芳文","creatorNameLang":"ja"},{"creatorName":"スズキ, ヨシフミ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Tsukasaki, Yoshimitsu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kajiwara, Kentaro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawado, Seiji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iida, Satoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Chikaura, Yoshinori"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2010-02-03"}],"displaytype":"detail","filename":"20100203170619458.pdf","filesize":[{"value":"402.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"20100203170619458.pdf","url":"https://kyutech.repo.nii.ac.jp/record/3411/files/20100203170619458.pdf"},"version_id":"84423a81-993a-48bf-a096-9462e1bf9361"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"silicon","subitem_subject_scheme":"Other"},{"subitem_subject":"elemental semiconductors","subitem_subject_scheme":"Other"},{"subitem_subject":"surface roughness","subitem_subject_scheme":"Other"},{"subitem_subject":"chemical mechanical polishing","subitem_subject_scheme":"Other"},{"subitem_subject":"integrated circuit technology","subitem_subject_scheme":"Other"},{"subitem_subject":"X-ray diffraction","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Observation of silicon front surface topographs of an ultralarge-scale-integrated wafer by synchrotron x-ray plane wave","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Observation of silicon front surface topographs of an ultralarge-scale-integrated wafer by synchrotron x-ray plane wave"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2010-02-03"},"publish_date":"2010-02-03","publish_status":"0","recid":"3411","relation_version_is_last":true,"title":["Observation of silicon front surface topographs of an ultralarge-scale-integrated wafer by synchrotron x-ray plane wave"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T08:30:03.307017+00:00"}