{"created":"2023-05-15T11:55:27.287842+00:00","id":385,"links":{},"metadata":{"_buckets":{"deposit":"5788caec-55ad-43cb-84af-521f206256b2"},"_deposit":{"created_by":3,"id":"385","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"385"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00000385","sets":["8:9"]},"author_link":["252","1956","1957","1958","1959"],"control_number":"385","item_1689815586683":{"attribute_name":"CRID","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://cir.nii.ac.jp/crid/1050001202645853952","subitem_relation_type_select":"URI"}}]},"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-05-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"19","bibliographicPageEnd":"12657","bibliographicPageStart":"12654","bibliographicVolumeNumber":"61","bibliographic_titles":[{"bibliographic_title":"Physical review. Third series. B, Condensed matter and materials physics","bibliographic_titleLang":"en"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ultraviolet anti-Stokes photoluminescence (PL) is observed in InxGa1-xN/GaN multiple quantum wells. The observed anti-Stokes PL exhibits a quadratic dependence on the excitation energy density. Anti-Stokes PL excitation spectrum is proportional to the optical absorption spectrum of the InxGa1-xN quantum wells. Time-resolved PL measurement shows that a decay of the anti-Stokes PL is slower than that of the GaN PL under the excitation above the band gap of the GaN barrier, and it is half the time constant of the InxGa1-xN PL decay. A two-step two-photon absorption process is directly observed by means of two-color pump-and-probe experiment. It is considered that the anti-Stokes PL is caused by a two-step two-photon absorption process involving a localized state in the InxGa1-xN quantum wells as the intermediate state, and that the second absorption step is provided by photon recycling of the InxGa1-xN PL.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_21_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"lang":"ja"}]}]}]},"item_21_publisher_7":{"attribute_name":"出版社","attribute_value_mlt":[{"subitem_publisher":"Published by the American Physical Society through the American Institute of Physics"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1103/PhysRevB.61.12654","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"著作権関連情報","attribute_value_mlt":[{"subitem_rights":"Copyright © 2000 American Physical Society"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA11187113","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2469-9969","subitem_source_identifier_type":"EISSN"},{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"PISSN"}]},"item_21_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"425","subitem_subject_scheme":"NDC"}]},"item_21_version_type_58":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNames":[{}]}],"creatorNames":[{"creatorName":"Satake, Akihiro","creatorNameLang":"en"},{"creatorName":"佐竹, 昭泰","creatorNameLang":"ja"},{"creatorName":"サタケ, アキヒロ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Masumoto, Yasuaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Miyajima, Takao","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Asatsuma, Tsunenori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hino, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2008-01-09"}],"displaytype":"detail","filename":"p12654_1.pdf","filesize":[{"value":"72.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"p12654_1.pdf","url":"https://kyutech.repo.nii.ac.jp/record/385/files/p12654_1.pdf"},"version_id":"806a0893-a527-4ca2-9cdb-95a9e4cd9eb1"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ultraviolet anti-Stokes photoluminescence in InxGa1-xN/GaN quantum-well structures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ultraviolet anti-Stokes photoluminescence in InxGa1-xN/GaN quantum-well structures","subitem_title_language":"en"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-01-09"},"publish_date":"2008-01-09","publish_status":"0","recid":"385","relation_version_is_last":true,"title":["Ultraviolet anti-Stokes photoluminescence in InxGa1-xN/GaN quantum-well structures"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-04-02T08:42:23.934839+00:00"}