@article{oai:kyutech.repo.nii.ac.jp:00000402,
 author = {Hayakawa, Yuko and Kohiki, Shigemi and 古曵, 重美 and Arai, Masao and Yoshikawa, Hideki and Fukushima, Sei and Wagatsuma, Kazuaki and Oku, Masaoki and Shoji, Fumiya},
 issue = {17},
 journal = {Physical review. Third series. B, Condensed matter and materials physics},
 month = {May},
 note = {The valence-band spectrum of an amorphous OsO2 film deposited by glow discharge of OsO4 vapor can bepredicted well with calculated electronic band structure of crystalline OsO2 from first principles using theliner-muffin-tin-orbital method with the local-density approximation. Resistivity of the amorphous OsO2 wasless than 631023 V cm at 80 K, and it was almost temperature independent, but the temperature coefficient ofresistivity was negative. The Hall coefficient of the amorphous OsO2 increased with temperature, and wassaturated at around 220 K. Temperature dependence of the Hall mobility was proportional to T3/2, and itimplies that the scattering of charged carriers by ionized atoms is dominant below 220 K.},
 pages = {11125--11127},
 title = {Electronic structure and electrical properties of amorphous OsO2},
 volume = {59},
 year = {1999},
 yomi = {コヒキ, シゲミ}
}