ログイン
Language:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

  1. 学位論文
  2. 学位論文

CMPにおける可変回転ポリシング法に関する研究

https://doi.org/10.18997/00004239
https://doi.org/10.18997/00004239
0893eb0c-e9ff-4432-883f-7b87db7f288a
名前 / ファイル ライセンス アクション
jou_k_301.pdf jou_k_301.pdf (8.6 MB)
アイテムタイプ 学位論文 = Thesis or Dissertation(1)
公開日 2015-08-05
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_db06
資源タイプ doctoral thesis
タイトル
タイトル Study on Variable Rotation Polishing Method in Chemical Mechanical Polishing
言語 en
タイトル
タイトル CMPにおける可変回転ポリシング法に関する研究
言語 ja
言語
言語 eng
著者 Pipat, Phaisalpanumas

× Pipat, Phaisalpanumas

en Pipat, Phaisalpanumas

Search repository
抄録
内容記述タイプ Abstract
内容記述 Variable rotation polishing (VRP) method is proposed in order to improve polishing performance such as material removal rate (MRR). The VRP method is characterized as a combination of the additional backward rotation with the forward rotation only (i.e. the conventional polishing). The MRR increases as the angle of additional backward rotation becomes higher until 360 degrees. In that case, the MRR of the VRP method was 38 percent higher than that of the conventional polishing. Asperity of polishing pad surface is one of the dominant parameters affecting the MRRs and stabilities of the Chemical Mechanical Polishing (CMP) process. According to the investigation of a polishing pad surface topography suggests that the asperity of the polishing pad surface was kept standing upright by backward rotation of the polishing pad. Particularly, the peak area of the asperities on polishing pad surface, the roughness became higher in the VRP method than in the conventional method. This result predicts that there are more the number and the area of the polishing pad asperities, which would approach near to the wafer surface being polished, are kept standing upright in the VRP method. Therefore, these asperities was able to consequently sustain the MRRs. In other words, this behavior suggests that in the VRP method, the preservation of the asperity on polishing pad surface would sustain the MRR because of the backward rotation, which may contribute to the realization of a polishing pad conditioning treatment-free CMP process. This feature also indicates that this method could result in the longer polishing pad life, namely the cost reduction of polishing pad. Slurry flow distribution and slurry film thickness were also evaluated in the VRP method comparing to the conventional polishing method. The slurry flow distribution was analyzed through a transparent quartz substrate by a high-speed camera. The slurry flow distribution of the VRP method was not uniform as compared with the conventional method, although the MRR of the VRP method was higher than that of the conventional method. The slurry film thickness variation was measured using a surface scanning laser confocal displacement meter on the upper surface position of a quartz substrate with and without slurry. The position of a quartz substrate varied from 9 μm to 8 μm during the CMP process. This implies that the slurry film thickness in the VRP method was 1 μm thinner than that of the conventional polishing. These results suggest that these 2 parameters are not dominantly effective against the MRR of the CMP process. As above mentioned, the preservation of the asperity on polishing pad surface is one of the dominant parameters to sustain the MRR.
目次
内容記述タイプ TableOfContents
内容記述 CHAPTER 1 Introduction||CHAPTER 2 The Chemical Mechanical Polishing Technology||CHAPTER 3 The Variable Rotation Polishing Method in theCMP Process||CHAPTER 4 The Polishing Performance of Variable Rotation Polishing Method||CHAPTER 5 Mechanisms Analysis of the Variable Rotation Polishing Method||CHAPTER 6 Polishing Pad Analysis by 3D Topography Observation||CHAPTER 7 Conclusions
備考
内容記述タイプ Other
内容記述 九州工業大学博士学位論文 学位記番号:情工博甲第301号 学位授与年月日:平成27年3月25日
キーワード
主題Scheme Other
主題 Variable Rotation Polishing
キーワード
主題Scheme Other
主題 Chemical Mechanical Polishing
キーワード
主題Scheme Other
主題 CMP process
キーワード
主題Scheme Other
主題 Slurry
キーワード
主題Scheme Other
主題 Polishing pad
キーワード
主題Scheme Other
主題 Material removal rate
キーワード
主題Scheme Other
主題 Asperity
アドバイザー
鈴木, 恵友
学位授与番号
学位授与番号 甲第301号
学位名
学位名 博士(情報工学)
学位授与年月日
学位授与年月日 2015-03-25
学位授与機関
学位授与機関識別子Scheme kakenhi
学位授与機関識別子 17104
学位授与機関名 九州工業大学
学位授与年度
内容記述タイプ Other
内容記述 平成26年度
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
ID登録
ID登録 10.18997/00004239
ID登録タイプ JaLC
戻る
0
views
See details
Views

Versions

Ver.1 2023-05-15 12:46:31.673818
Show All versions

Share

Share
tweet

Cite as

Other

print

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR 2.0
  • OAI-PMH JPCOAR 1.0
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX
  • ZIP

コミュニティ

確認

確認

確認


Powered by WEKO3


Powered by WEKO3