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PL enhancement was observed and PCI-PL measurements revealed that PL enhancement was attributed to a transport process of holes with a larger time constant in Cu-doped n-Si substrate in which an interval trap process is controlled by Cu doping.","subitem_description_type":"Abstract"}]},"item_23_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"International Conference and Summer School on Advanced Silicide Technology 2014, July 19–21, 2014, Tokyo, Japan","subitem_description_type":"Other"}]},"item_23_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Conference 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