@inproceedings{oai:kyutech.repo.nii.ac.jp:00004518,
 author = {Tsukuda, Masanori and Baba, Akiyoshi and 馬場, 昭好 and Shiba, Yuji and Omura, Ichiro and 大村, 一郎},
 book = {2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2016)},
 month = {Jun},
 note = {The performance of a novel diode with characteristic trench shape is predicted by TCAD simulation. A novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process is proposed for a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced to a half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. The novel diode structure is a strong candidate when the simple fabrication process under development is established., ISPSD 2016 28th International Symposium on Power Semiconductor Devices and ICs., Jun 12-16, 2016, Žofín Palace, Prague, Czech Republic},
 pages = {295--298},
 publisher = {IEEE},
 title = {Novel 600 V Low Reverse Recovery Loss Vertical PiN Diode with Hole Pockets by Bosch Deep Trench},
 year = {2016},
 yomi = {ババ, アキヨシ and オオムラ, イチロウ}
}