@inproceedings{oai:kyutech.repo.nii.ac.jp:00004520,
 author = {今城, 寛紀 and Omura, Ichiro and 大村, 一郎 and 附田, 正則},
 book = {電気学会研究会資料. EDD, 電子デバイス研究会},
 month = {Oct},
 note = {Power semiconductors are becoming key devices for energy-saving society, therefore higher performance and productivity is required. We proposed a silicon-on-insulator (SOI) PiN diode, which realizes ultra-fast reverse recovery without waveform oscillation. This diode is expected to reduce energy loss of power devices and to improve performance of inverter circuits., 電子デバイス/半導体電力変換合同研究会, 10月30日-31日, 2014年, 産業技術総合研究所 TIAナノ連携棟, 茨城県},
 publisher = {社団法人電気学会},
 title = {SOI超高速横型シリコンダイオード},
 volume = {EDD-14},
 year = {2014},
 yomi = {オオムラ, イチロウ}
}