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アイテム
Design of Trench Termination for High Voltage Devices
http://hdl.handle.net/10228/5748
http://hdl.handle.net/10228/5748d73248f6-0591-4bc7-8eb0-706d2590706b
| 名前 / ファイル | ライセンス | アクション |
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nperc3.pdf (551.9 kB)
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| アイテムタイプ | 会議発表論文 = Conference Paper(1) | |||||||||||
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| 公開日 | 2016-09-13 | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||
| 資源タイプ | conference paper | |||||||||||
| タイトル | ||||||||||||
| タイトル | Design of Trench Termination for High Voltage Devices | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 著者 |
Kamibaba, Ryu
× Kamibaba, Ryu× Takahama, Kenichi× 大村, 一郎
WEKO
16176
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | Trench termination technique has been attractive for high voltage power devices design with the possibilities of reducing the chip area and improves the blocking voltage to the level of ideal one, by reducing the termination length and maintaining the ideal electric field uniformity near the chip edge. The authors unveil, for the first time, that positive charges due to the holes accumulated in the trench side wall terminate the high electric field and show the robust design for the trench termination against the avalanche phenomena. | |||||||||||
| 備考 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | The 22nd International Symposium on Power Semiconductor Devices & Ics (ISPSD2010), 6月6日-10日, 2010年, International Conference Center Hiroshima, Hiroshima, Japan | |||||||||||
| 書誌情報 |
2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) p. 107-110, 発行日 2010-06 |
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| 出版社 | ||||||||||||
| 出版社 | IEEE | |||||||||||
| 著作権関連情報 | ||||||||||||
| 権利情報 | IEEE | |||||||||||
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| 出版タイプ | AM | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
| 査読の有無 | ||||||||||||
| 値 | yes | |||||||||||
| 連携ID | ||||||||||||
| 値 | 5569 | |||||||||||
