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Numerical study on very high speed silicon PiN diode possibility for power ICs in comparison with SiC-SBD
http://hdl.handle.net/10228/5761
http://hdl.handle.net/10228/5761a0c21f15-2d4e-41d5-b216-17dde6c88999
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
nperc5.pdf (306.4 kB)
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| Item type | 会議発表論文 = Conference Paper(1) | |||||||||||
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| 公開日 | 2016-09-13 | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||
| 資源タイプ | conference paper | |||||||||||
| タイトル | ||||||||||||
| タイトル | Numerical study on very high speed silicon PiN diode possibility for power ICs in comparison with SiC-SBD | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 著者 |
Takahama, Kenichi
× Takahama, Kenichi× 大村, 一郎
WEKO
16176
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | 600V PiN diodes reverse recovery speed have been a bottle neck in reduction of system losses. In some applications such as PFC (Power Factor Control) SiC-SBDs have been replacing PiN diodes in recent years. The high speed reverse recovery characteristics of SiC-SBDs have contributed to the PFC downsizing and the efficiency improvement, only limited number of the diodes has been installed due to the high cost and the difficulty in implementation into power integrated circuits(Power ICs). In this work we have tried to find out possibilities to improve the PiN diodes capabilities in high speed applications based on analytical model, 1D and 2D-device simulation as our research tools. It is found that the reverse recovery can be improved by injection efficiency control with shallow P-/N-emitter. Simulated SOI structure shows the possibility to attain high speed characteristics comparable to SiC-SBDs. | |||||||||||
| 備考 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | The 22nd International Symposium on Power Semiconductor Devices & Ics (ISPSD2010), 6月6日-10日, 2010年, International Conference Center Hiroshima, Hiroshima, Japan | |||||||||||
| 書誌情報 |
2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) p. 169-172, 発行日 2010-06 |
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| 出版社 | ||||||||||||
| 出版社 | IEEE | |||||||||||
| 著作権関連情報 | ||||||||||||
| 権利情報 | IEEE | |||||||||||
| 出版タイプ | ||||||||||||
| 出版タイプ | AM | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
| 査読の有無 | ||||||||||||
| 値 | yes | |||||||||||
| 連携ID | ||||||||||||
| 値 | 5567 | |||||||||||
