@inproceedings{oai:kyutech.repo.nii.ac.jp:00004554,
 author = {原田, 翔平 and Omura, Ichiro and 大村, 一郎 and 附田, 正則},
 book = {電気学会研究会資料. EDD, 電子デバイス研究会},
 month = {Oct},
 note = {Double gate IGBT is proposed and confirmed significant reduction of turn-off loss with TCAD simulation. Conventional IGBTs have a problem of large turn-off loss with stored carrier in N-base. The proposed structure declines carrier injection during turn-off by dynamic hole injection decrease with the collector side gate control., 電子デバイス/半導体電力変換 合同研究会, 10月29日-30日, 2015年, 長崎歴史文化博物館, 長崎県},
 publisher = {社団法人電気学会},
 title = {IGBTダブルゲート構造の提案とアクティブ・ホール注入制御：数値解析による低損失化の原理確認},
 volume = {EDD-15},
 year = {2015},
 yomi = {オオムラ, イチロウ}
}