@inproceedings{oai:kyutech.repo.nii.ac.jp:00004556,
 author = {Tsukuda, Masanori and Imaki, Hironori and Omura, Ichiro and 大村, 一郎},
 book = {2014 International Conference on Solid State Devices and Materials (SSDM 2014)},
 month = {Sep},
 note = {PiN diode design for oscillation-induced EMI suppression is proposed with novel structure. The proposed diode is lateral structure with traps using SOI substrate. Conventional PiN diode with vertical structure generates waveform oscillation and the oscillation lower power electronics system reliability. The design of proposed lateral structure with traps will contributes the performance improvement of all of bipolar power devices including IGBT., 2014 International Conference on Solid State Devices and Materials, September 8, 2014, Tsukuba International Congress Center, Ibaraki, Japan},
 pages = {1010--1011},
 publisher = {SSDM Organizing Committee},
 title = {“Design for EMI Suppression” During Reverse Recovery by 600V Lateral SOI PiN Diode with Traps},
 volume = {N-2-3},
 year = {2014},
 yomi = {オオムラ, イチロウ}
}