{"created":"2023-05-15T11:58:31.029314+00:00","id":4556,"links":{},"metadata":{"_buckets":{"deposit":"c1383f8a-b0e0-4a8e-94e9-d81881e00b0d"},"_deposit":{"created_by":3,"id":"4556","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4556"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00004556","sets":["15:20"]},"author_link":["16176","16399","16400"],"item_23_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"1011","bibliographicPageStart":"1010","bibliographicVolumeNumber":"N-2-3","bibliographic_titles":[{"bibliographic_title":"2014 International Conference on Solid State Devices and Materials (SSDM 2014)"}]}]},"item_23_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"PiN diode design for oscillation-induced EMI suppression is proposed with novel structure. The proposed diode is lateral structure with traps using SOI substrate. Conventional PiN diode with vertical structure generates waveform oscillation and the oscillation lower power electronics system reliability. The design of proposed lateral structure with traps will contributes the performance improvement of all of bipolar power devices including IGBT.","subitem_description_type":"Abstract"}]},"item_23_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"2014 International Conference on Solid State Devices and Materials, September 8, 2014, Tsukuba International Congress Center, Ibaraki, Japan","subitem_description_type":"Other"}]},"item_23_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Conference Paper","subitem_description_type":"Other"}]},"item_23_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"SSDM Organizing Committee"}]},"item_23_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"IEEE"}]},"item_23_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_23_text_37":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"The International Centre for the Study of East Asian Development"},{"subitem_text_value":"Kyushu Institute of Technology"},{"subitem_text_value":"Kyushu Institute of Technology"}]},"item_23_text_62":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"5579"}]},"item_23_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Tsukuda, Masanori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Imaki, Hironori"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-09-13"}],"displaytype":"detail","filename":"nperc36.pdf","filesize":[{"value":"300.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc36.pdf","url":"https://kyutech.repo.nii.ac.jp/record/4556/files/nperc36.pdf"},"version_id":"427f0224-873b-4794-8e2f-05944a343005"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"“Design for EMI Suppression” During Reverse Recovery by 600V Lateral SOI PiN Diode with Traps","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"“Design for EMI Suppression” During Reverse Recovery by 600V Lateral SOI PiN Diode with Traps"}]},"item_type_id":"23","owner":"3","path":["20"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-09-13"},"publish_date":"2016-09-13","publish_status":"0","recid":"4556","relation_version_is_last":true,"title":["“Design for EMI Suppression” During Reverse Recovery by 600V Lateral SOI PiN Diode with Traps"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:49:02.925690+00:00"}