WEKO3
アイテム
Optimal Double Sided Gate Control of IGBT for Lower Turn-off Loss and Surge Voltage Suppression
http://hdl.handle.net/10228/5784
http://hdl.handle.net/10228/57847b53bc54-5d1f-4bfd-9869-e97f7c2b5f75
| 名前 / ファイル | ライセンス | アクション |
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| アイテムタイプ | 会議発表論文 = Conference Paper(1) | |||||||||||
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| 公開日 | 2016-09-13 | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||||||||
| 資源タイプ | conference paper | |||||||||||
| タイトル | ||||||||||||
| タイトル | Optimal Double Sided Gate Control of IGBT for Lower Turn-off Loss and Surge Voltage Suppression | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| 著者 |
Harada, Shohei
× Harada, Shohei× Tsukuda, Masanor× 大村, 一郎
WEKO
16176
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | The current density of power semiconductor devices continues to increase and, carrier injection has been enhanced by several methods even though turn-off loss tends to be increased. In order to address this problem, we propose a double sided gate IGBT and optimal gate control method for lower turn-off loss. TCAD simulation numerically shows that the proposed IGBT successfully decreases turn-off loss. Furthermore, the turn-off loss is further decreased with optimal control of the double sided gate without surge voltage increase. In addition, we consider the effects of stray inductance on the performance of double sided gate IGBT. | |||||||||||
| 備考 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | CIPS 2016 International Conference on Integrated Power Electronics Systems, Mar 8-10, 2016, Nuremberg, Germany | |||||||||||
| 書誌情報 |
International Conference on Integrated Power Electronics Systems (CIPS 2016) 巻 S04, p. 66-70, 発行日 2016-03 |
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| 出版社 | ||||||||||||
| 出版社 | Vde Verlag | |||||||||||
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| 権利情報 | IEEE | |||||||||||
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| 出版タイプ | AM | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
| 査読の有無 | ||||||||||||
| 値 | yes | |||||||||||
| 連携ID | ||||||||||||
| 値 | 5577 | |||||||||||