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Electric field induced effects in Y3N@[C80]6- anionic solid
http://hdl.handle.net/10228/5854
http://hdl.handle.net/10228/58545cc02ce0-e662-4cea-9dad-a9e9a590f225
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JAP117_154308.pdf (3.3 MB)
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| Item type | 学術雑誌論文 = Journal Article(1) | |||||
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| 公開日 | 2016-10-27 | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| タイトル | ||||||
| タイトル | Electric field induced effects in Y3N@[C80]6- anionic solid | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 著者 |
孫, 勇
× 孫, 勇× Sezaimaru, Hiroki× Sakaino, Masamichi× Ogawa, Naoto× Kirimoto, Kenta |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | By measuring the i−vi−v characteristics of Y3N@[C80]6− anionic solid at various temperatures and electric field strengths, four conducting phases with i∝vi∝v , i∝v2i∝v2 with low resistance, i∝v4i∝v4 and i∝v2i∝v2 with high resistance were observed. First, at temperatures below 100 K and field strengths below 30 Vcm−1Vcm−1 , the current passing through the sample was a linear function of the d.c. bias voltage due to free moving charges. Second, at the same field strengths, the trapped carrier was thermally activated with activation energies of 13.6 meV for temperature range of 100−250100−250 K and 88.7 meV for 250−450250−450 K. In this conducting phase, the carrier transport was governed by space charge limited conduction mechanism. Third, when the electric field increased from 30 to 120 Vcm−1Vcm−1 , the ii became a quartic function of the vv because the carrier mobility is a quadratic function of the field strength. A conducting phase with high resistance was observed at temperatures below 100 K. The trapped carrier was thermally activated with activation energies of 146.5 meV for temperature range of 100−250100−250 K and 288.5 meV for 250−450250−450 K. Finally, in the electric field strengths of 120−2000120−2000 Vcm−1Vcm−1 , a high resistance phase appeared in the anionic solid at temperatures below 100 K. The current was a quadratic function of the d.c. bias voltage, and the carrier mobility was independent of the field strength. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Journal of Applied Physics 巻 117, 号 15, p. 154308-1-154308-9, 発行日 2015-04-21 |
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| 出版社 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.4918665 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00693547 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | EISSN | |||||
| 収録物識別子 | 1089-7550 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| 著作権関連情報 | ||||||
| 権利情報 | Copyright (c) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 査読の有無 | ||||||
| 値 | yes | |||||
| 研究者情報 | ||||||
| URL | https://hyokadb02.jimu.kyutech.ac.jp/html/174_ja.html | |||||
| 連携ID | ||||||
| 値 | 5734 | |||||
