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  1. 学術雑誌論文
  2. 5 技術(工学)

Carrier transport properties of nanocrystalline Er3N@C80

http://hdl.handle.net/10228/5855
http://hdl.handle.net/10228/5855
b7d1520c-7814-487b-9aeb-a358bf5315c8
名前 / ファイル ライセンス アクション
JAP116_034301.pdf JAP116_034301.pdf (2.2 MB)
アイテムタイプ 学術雑誌論文 = Journal Article(1)
公開日 2016-10-27
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ journal article
タイトル
タイトル Carrier transport properties of nanocrystalline Er3N@C80
言語 en
言語
言語 eng
著者 孫, 勇

× 孫, 勇

WEKO 16755
e-Rad 60274560
Scopus著者ID 35231625400

ja 孫, 勇

en Sun, Yong

ja-Kana ソン, ユー


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Maeda, Yuki

× Maeda, Yuki

WEKO 16778

en Maeda, Yuki

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Sezaimaru, Hiroki

× Sezaimaru, Hiroki

WEKO 16779

en Sezaimaru, Hiroki

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Sakaino, Masamichi

× Sakaino, Masamichi

WEKO 16780

en Sakaino, Masamichi

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Kirimoto, Kenta

× Kirimoto, Kenta

WEKO 16781

en Kirimoto, Kenta

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抄録
内容記述タイプ Abstract
内容記述 Electrical transport properties of the nanocrystalline Er3N@C80 with fcc crystal structure were characterized by measuring both temperature-dependent d.c. conductance and a.c. impedance. The results showed that the Er3N@C80 sample has characteristics of n-type semiconductor and an electron affinity larger than work function of gold metal. The Er3N@C80/Au interface has an ohmic contact behavior and the contact resistance was very small as compared with bulk resistance of the Er3N@C80 sample. The charge carriers in the sample were thermally excited from various trapped levels and both acoustic phonon and ionic scatterings become a dominant process in different temperature regions, respectively. At temperatures below 250 K, the activation energy of the trapped carrier was estimated to be 35.5 meV, and the ionic scattering was a dominant mechanism. On the other hand, at temperatures above 350 K, the activation energy was reduced to 15.9 meV, and the acoustic phonon scattering was a dominant mechanism. In addition, a polarization effect from the charge carrier was observed at low frequencies below 2.0 MHz, and the relative intrinsic permittivity of the Er3N@C80 nanocrystalline lattice was estimated to be 4.6 at frequency of 5.0 MHz.
言語 en
書誌情報 en : Journal of Applied Physics

巻 116, 号 3, p. 034301-1-034301-7, 発行日 2014-07
出版社
出版者 American Institute of Physics
言語 en
DOI
関連タイプ isIdenticalTo
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.4887796
NCID
収録物識別子タイプ NCID
収録物識別子 AA00693547
ISSN
収録物識別子タイプ EISSN
収録物識別子 1089-7550
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-8979
著作権関連情報
権利情報 Copyright (c) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
査読の有無
値 yes
研究者情報
URL https://hyokadb02.jimu.kyutech.ac.jp/html/174_ja.html
連携ID
値 5745
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