{"created":"2023-05-15T11:58:37.872253+00:00","id":4716,"links":{},"metadata":{"_buckets":{"deposit":"e92ad20b-649e-4106-80e5-95c8908261b4"},"_deposit":{"created_by":3,"id":"4716","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4716"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00004716","sets":["8:24"]},"author_link":["16176","17164","17163"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-12-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"69","bibliographicPageStart":"61","bibliographicVolumeNumber":"104","bibliographic_titles":[{"bibliographic_title":"Solid-State Electronics"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"An ultrafast lateral silicon PiN diode with traps is proposed using a silicon-on-insulator (SOI) substrate with traps. The proposed diode successfully suppresses waveform oscillation because the trapped hole suppresses electric field penetration and prevents the oscillation trigger known as “dynamic punch-through.” Because of the short current path caused by the oscillation prevention, the reverse recovery speed was higher and the reverse recovery loss was strongly reduced. The proposed trap structure and design method would contribute to performance improvement of all power semiconductor devices including IGBTs and power MOSFETs.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/j.sse.2014.11.011","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Elsevier"}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_10":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11541347","subitem_source_identifier_type":"NCID"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0038-1101","subitem_source_identifier_type":"ISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Asian Growth Research Institute, Kyushu Institute of Technology"},{"subitem_text_value":"Kyushu Institute of Technology"},{"subitem_text_value":"Kyushu Institute of Technology"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"5590"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Tsukuda, Masanori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Imaki, Hironori"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-12-09"}],"displaytype":"detail","filename":"nperc39.pdf","filesize":[{"value":"806.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc39.pdf","url":"https://kyutech.repo.nii.ac.jp/record/4716/files/nperc39.pdf"},"version_id":"4ca225fd-6a5e-422c-ac83-593bac915780"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Diode","subitem_subject_scheme":"Other"},{"subitem_subject":"Waveform oscillation","subitem_subject_scheme":"Other"},{"subitem_subject":"Reverse recovery","subitem_subject_scheme":"Other"},{"subitem_subject":"Forward voltage drop","subitem_subject_scheme":"Other"},{"subitem_subject":"Geometric trap","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ultrafast Lateral 600 V Silicon SOI PiN Diode with Geometric Traps for Preventing Waveform Oscillation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ultrafast Lateral 600 V Silicon SOI PiN Diode with Geometric Traps for Preventing Waveform Oscillation"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-12-09"},"publish_date":"2016-12-09","publish_status":"0","recid":"4716","relation_version_is_last":true,"title":["Ultrafast Lateral 600 V Silicon SOI PiN Diode with Geometric Traps for Preventing Waveform Oscillation"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:48:51.694425+00:00"}