@article{oai:kyutech.repo.nii.ac.jp:00004748,
 author = {Singh, Vipul and Thakur, Anil K. and Pandey, Shyam Sudhir and パンディ, シャム スディル and Takashima, Wataru and 高嶋, 授 and Kaneto, Keiichi},
 issue = {2},
 journal = {Applied Physics Express},
 month = {Jan},
 note = {The depletion layer formed at the interface of aluminum (Al) with poly(3-hexylthiophene-2, 5-diyl) (P3HT) has been studied, using the bias dependent photoluminescence (PL) spectra in indium tin oxide (ITO)/P3HT/Al sandwiched cells. A quenching in the PL intensity has been observed under the reverse bias conditions, which has been attributed to the increase in the depletion layer width. A direct relationship between the depletion layer width and the PL quenching has been derived and explained.},
 pages = {021801-1--021801-3},
 title = {Characterization of Depletion Layer using Photoluminescence Technique},
 volume = {1},
 year = {2008},
 yomi = {タカシマ, ワタル}
}