@article{oai:kyutech.repo.nii.ac.jp:00004951,
 author = {Chow,  T. Paul and Omura, Ichiro and 大村, 一郎 and Higashiwaki,  Masataka and Kawarada,  Hiroshi and Pala,  Vipindas},
 issue = {3},
 journal = {IEEE Transactions on Electron Devices},
 month = {Feb},
 note = {We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.},
 pages = {856--873},
 title = {Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors},
 volume = {64},
 year = {2017},
 yomi = {オオムラ, イチロウ}
}