{"created":"2023-05-15T11:58:47.205243+00:00","id":4951,"links":{},"metadata":{"_buckets":{"deposit":"d577e1b5-4f90-42b3-bc05-e04dc9e7fb2a"},"_deposit":{"created_by":3,"id":"4951","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4951"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00004951","sets":["8:24"]},"author_link":["19909","19907","19910","16176","19911"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-02-13","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"873","bibliographicPageStart":"856","bibliographicVolumeNumber":"64","bibliographic_titles":[{"bibliographic_title":"IEEE Transactions on Electron Devices"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1109/TED.2017.2653759","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ieeexplore.ieee.org/document/7851006/","subitem_relation_type_select":"URI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"IEEE"},{"subitem_rights":"© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0018-9383 ","subitem_source_identifier_type":"ISSN"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute"},{"subitem_text_value":"Department of Electrical Engineering and Electronics, Kyushu Institute of Technology"},{"subitem_text_value":"National Institute of Information and Communications Technology"},{"subitem_text_value":"School of SCI & ENGR Bldg, Waseda University"},{"subitem_text_value":"Maxim Integrated"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"6098"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Chow,  T. Paul"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Omura, Ichiro","creatorNameLang":"en"},{"creatorName":"大村, 一郎","creatorNameLang":"ja"},{"creatorName":"オオムラ, イチロウ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Higashiwaki,  Masataka"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawarada,  Hiroshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Pala,  Vipindas"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-04-27"}],"displaytype":"detail","filename":"nperc81.pdf","filesize":[{"value":"2.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"nperc81.pdf","url":"https://kyutech.repo.nii.ac.jp/record/4951/files/nperc81.pdf"},"version_id":"f2220ff4-dc8e-4a7e-952b-33d215943c46"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors"}]},"item_type_id":"21","owner":"3","path":["24"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-04-27"},"publish_date":"2017-04-27","publish_status":"0","recid":"4951","relation_version_is_last":true,"title":["Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-10-25T10:48:50.808566+00:00"}