@article{oai:kyutech.repo.nii.ac.jp:00005017,
 author = {Luo,  Suning and Kohiki, Shigemi and 古曵, 重美 and Okada,  Koichi and Kohno,  Atsushi and Tajiri,  Takayuki and Arai,  Masao and Ishii,  Satoshi and Sekiba,  Daiichiro and Mitome,  Masanori and Shoji,  Fumiya},
 issue = {3},
 journal = {ACS Applied Materials & Interfaces},
 month = {Feb},
 note = {X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy-elastic recoil detection analysis (RBS-ERDA) revealed that hydrogen in working gas for dc-plasma sputter deposition resided in indium tin oxide (ITO) films and generated the O(-) state seen as the suboxide-like O 1s peak in XPS. Growth of the suboxide-like O 1s peak was parallel with an increase of the resided hydrogen quantified by RBS-ERDA. The first-principles band structure calculation revealed that the electronic structure of In(2)O(3) crystal was realized typically for the most conductive as-deposited film grown in the gas containing hydrogen of 1%. The as-deposited film grown in the gas containing hydrogen of more than 1% exhibited rather high density but low mobility of carriers and showed the electronic structure above 4 eV originated from the O(-) state due to the resided hydrogen in addition to that of the most conducting one. Both well preserved In(2)O(3) band structure and proper concentration of the O(2-) vacancy are indispensable for achieving the highest conductivity; however, the O(-) state lowers efficiency of the carrier doping using the O(2-) vacancy in the lattice and increases density of the ionized scattering center for the carriers.},
 pages = {663--668},
 title = {Effects of hydrogen in working gas on valence states of oxygen in sputter-deposited indium tin oxide thin films},
 volume = {2},
 year = {2010},
 yomi = {コヒキ, シゲミ}
}