{"created":"2023-05-15T11:58:50.184677+00:00","id":5017,"links":{},"metadata":{"_buckets":{"deposit":"c5da9f86-c003-418f-b320-1510d2f2d74a"},"_deposit":{"created_by":3,"id":"5017","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5017"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00005017","sets":["8:9"]},"author_link":["20095","20097","20096","20098","20093","20416","20090","20092","20099","20094"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-02-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"668 ","bibliographicPageStart":"663","bibliographicVolumeNumber":"2","bibliographic_titles":[{"bibliographic_title":"ACS Applied Materials & Interfaces"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy-elastic recoil detection analysis (RBS-ERDA) revealed that hydrogen in working gas for dc-plasma sputter deposition resided in indium tin oxide (ITO) films and generated the O(-) state seen as the suboxide-like O 1s peak in XPS. Growth of the suboxide-like O 1s peak was parallel with an increase of the resided hydrogen quantified by RBS-ERDA. The first-principles band structure calculation revealed that the electronic structure of In(2)O(3) crystal was realized typically for the most conductive as-deposited film grown in the gas containing hydrogen of 1%. The as-deposited film grown in the gas containing hydrogen of more than 1% exhibited rather high density but low mobility of carriers and showed the electronic structure above 4 eV originated from the O(-) state due to the resided hydrogen in addition to that of the most conducting one. Both well preserved In(2)O(3) band structure and proper concentration of the O(2-) vacancy are indispensable for achieving the highest conductivity; however, the O(-) state lowers efficiency of the carrier doping using the O(2-) vacancy in the lattice and increases density of the ionized scattering center for the carriers.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_link_62":{"attribute_name":"研究者情報","attribute_value_mlt":[{"subitem_link_url":"https://hyokadb02.jimu.kyutech.ac.jp/html/102_ja.html"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Chemical Society"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1021/am9006676","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://doi.org/10.1021/am9006676"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1021/am9006676","subitem_relation_type_select":"DOI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"American Chemical Society"},{"subitem_rights":"This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review. To access the final edited and published work, see http://pubs.acs.org/doi/abs/10.1021/am9006676%40proofing."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1944-8244","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1944-8252","subitem_source_identifier_type":"ISSN"}]},"item_21_text_28":{"attribute_name":"論文ID（連携）","attribute_value_mlt":[{"subitem_text_value":"10020171"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Materials Science, Kyushu Institute of Technology/ Liaoning Institute of Technology"},{"subitem_text_value":"Department of Materials Science, Kyushu Institute of Technology"},{"subitem_text_value":"Department of Materials Science, Kyushu Institute of Technology"},{"subitem_text_value":"Department of Applied Physics, Fukuoka University"},{"subitem_text_value":"Department of Applied Physics, Fukuoka University"},{"subitem_text_value":"National Institute for Materials Science"},{"subitem_text_value":"Tandem Accelerator Complex, University of Tsukuba"},{"subitem_text_value":"Tandem Accelerator Complex, University of Tsukuba"},{"subitem_text_value":"National Institute for Materials Science"},{"subitem_text_value":"Kyushu Kyoritsu University"}]},"item_21_text_57":{"attribute_name":"備考","attribute_value_mlt":[{"subitem_text_value":"取り込み日2015/12/22"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"5999"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Luo,  Suning"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Kohiki, Shigemi","creatorNameLang":"en"},{"creatorName":"古曵, 重美","creatorNameLang":"ja"},{"creatorName":"コヒキ, シゲミ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Okada,  Koichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kohno,  Atsushi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tajiri,  Takayuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Arai,  Masao"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishii,  Satoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sekiba,  Daiichiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mitome,  Masanori"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shoji,  Fumiya"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-06-02"}],"displaytype":"detail","filename":"acsami2_3_663.pdf","filesize":[{"value":"706.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"acsami2_3_663.pdf","url":"https://kyutech.repo.nii.ac.jp/record/5017/files/acsami2_3_663.pdf"},"version_id":"8a1a31c4-091d-4f46-afa9-d5155fecaabc"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Hydrogen incorporation","subitem_subject_scheme":"Other"},{"subitem_subject":"Sputter-deposition","subitem_subject_scheme":"Other"},{"subitem_subject":"ITO thin film","subitem_subject_scheme":"Other"},{"subitem_subject":"X-ray photoelectron spectroscopy","subitem_subject_scheme":"Other"},{"subitem_subject":"Rutherford backscattering spectroscopy-elastic recoil detection analysis","subitem_subject_scheme":"Other"},{"subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effects of hydrogen in working gas on valence states of oxygen in sputter-deposited indium tin oxide thin films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effects of hydrogen in working gas on valence states of oxygen in sputter-deposited indium tin oxide thin films"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-06-02"},"publish_date":"2017-06-02","publish_status":"0","recid":"5017","relation_version_is_last":true,"title":["Effects of hydrogen in working gas on valence states of oxygen in sputter-deposited indium tin oxide thin films"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:44:16.104340+00:00"}