{"created":"2023-05-15T11:58:50.292516+00:00","id":5019,"links":{},"metadata":{"_buckets":{"deposit":"67817807-7268-4771-9cba-3b8b4f66861d"},"_deposit":{"created_by":3,"id":"5019","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5019"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00005019","sets":["8:9"]},"author_link":["20106","20107","20108","20109","20104","20416"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-07-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"3581","bibliographicPageStart":"3577","bibliographicVolumeNumber":"13","bibliographic_titles":[{"bibliographic_title":"Crystal Growth & Design "}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The crystal structure of a γ-Ga2O3 layer grown epitaxially on an MgO substrate by a vapor phase transport method was investigated by transmission electron microscopy, electron diffraction, and scanning transmission electron microscopy with aberration correctors. Some forbidden reflections were excited in electron diffraction patterns by double reflection from the vicinity of the substrate interface. Phase boundaries are observed in atomic column images using high-angle annular dark field images. A structure model is proposed to explain the experimental results. Cation vacancy ordering is introduced in the structure model to distort the γ-Ga2O3 crystal lattice along one axis and reduce the lattice mismatch with the substrate. Some grains are formed and alter the directions to reduce the distortion for the other axis. The grains are stacked with {110} phase boundaries and form a rhombic dodecahedral honeycomb. The rhombic dodecahedral honeycomb structure model with cation vacancy ordering is stabilized by the lattice mismatch between the γ-Ga2O3 crystal and the MgO substrate, and it disappears at a depth of 170 nm from the interface.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal Article","subitem_description_type":"Other"}]},"item_21_link_62":{"attribute_name":"研究者情報","attribute_value_mlt":[{"subitem_link_url":"https://hyokadb02.jimu.kyutech.ac.jp/html/102_ja.html"}]},"item_21_publisher_7":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Chemical Society"}]},"item_21_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1021/cg400542x","subitem_relation_type_select":"DOI"}}]},"item_21_relation_14":{"attribute_name":"情報源","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://pubs.acs.org/doi/abs/10.1021/cg400542x"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://pubs.acs.org/doi/abs/10.1021/cg400542x","subitem_relation_type_select":"URI"}}]},"item_21_rights_13":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"American Chemical Society"},{"subitem_rights":"This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in Crystal Growth & Design, copyright © American Chemical Society after peer review. To access the final edited and published work, see http://pubs.acs.org/doi/abs/10.1021/cg400542x."}]},"item_21_select_59":{"attribute_name":"査読の有無","attribute_value_mlt":[{"subitem_select_item":"yes"}]},"item_21_source_id_8":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1528-7483","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1528-7505","subitem_source_identifier_type":"ISSN"}]},"item_21_text_28":{"attribute_name":"論文ID（連携）","attribute_value_mlt":[{"subitem_text_value":"10257011"}]},"item_21_text_36":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"International Center for Materials Nanoarchitectonics, National Institute for Materials Science"},{"subitem_text_value":"Department of Materials Science, Kyusyu Institute of Technology"},{"subitem_text_value":"Advanced Key Technologies Division, National Institute for Materials Science"},{"subitem_text_value":"Advanced Key Technologies Division, National Institute for Materials Science"},{"subitem_text_value":"Advanced Key Technologies Division, National Institute for Materials Science"},{"subitem_text_value":"International Center for Materials Nanoarchitectonics, National Institute for Materials Science"}]},"item_21_text_57":{"attribute_name":"備考","attribute_value_mlt":[{"subitem_text_value":"取り込み日2015/12/22"}]},"item_21_text_63":{"attribute_name":"連携ID","attribute_value_mlt":[{"subitem_text_value":"5989"}]},"item_21_version_type_58":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Mitome,  Masanori"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[],"affiliationNames":[{"affiliationName":""}]}],"creatorNames":[{"creatorName":"Kohiki, Shigemi","creatorNameLang":"en"},{"creatorName":"古曵, 重美","creatorNameLang":"ja"},{"creatorName":"コヒキ, シゲミ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Nagai,  Takuro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kurashima,  Keiji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kimoto,  Koji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Bando,  Yoshio"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-06-02"}],"displaytype":"detail","filename":"cgd13_8_3577_3581.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"cgd13_8_3577_3581.pdf","url":"https://kyutech.repo.nii.ac.jp/record/5019/files/cgd13_8_3577_3581.pdf"},"version_id":"06223ad5-fcb1-48c5-aea5-31cf8176b267"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"γ-Ga2O3","subitem_subject_scheme":"Other"},{"subitem_subject":"defect spinel structure","subitem_subject_scheme":"Other"},{"subitem_subject":"Epitaxial growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Cation vacancy ordering","subitem_subject_scheme":"Other"},{"subitem_subject":"Rhombic dodecahedral honeycomb","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"A Rhombic Dodecahedral Honeycomb Structure with Cation Vacancy Ordering in a γ-Ga2O3 Crystal","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"A Rhombic Dodecahedral Honeycomb Structure with Cation Vacancy Ordering in a γ-Ga2O3 Crystal"}]},"item_type_id":"21","owner":"3","path":["9"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-06-02"},"publish_date":"2017-06-02","publish_status":"0","recid":"5019","relation_version_is_last":true,"title":["A Rhombic Dodecahedral Honeycomb Structure with Cation Vacancy Ordering in a γ-Ga2O3 Crystal"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:32:29.884897+00:00"}