@article{oai:kyutech.repo.nii.ac.jp:00005035,
 author = {Okada,  Koichi and Kohiki, Shigemi and 古曵, 重美 and Mitome,  Masanori and Tanaka,  Hidekazu and Arai,  Masao and Mito, Masaki and 美藤, 正樹 and Deguchi, Hiroyuki and 出口, 博之},
 issue = {9},
 journal = {ACS Applied Materials & Interfaces},
 month = {Apr},
 note = {Epitaxial indium−tin oxide (ITO) thin films were fabricated on a yttria-stabilized zirconia (YSZ) substrate by pulsed-laser deposition using magnetite (Fe3O4) nanoparticle dispersed ITO powders as a target. Magnetoresistance of the film at a field of 1 T was 39% at 45 K, and it stayed at 3% above 225 K. The film demonstrated cooling hysteresis in the temperature dependence of direct-current magnetization. Transmission electron microscopy revealed that phase-separated Fe3O4 nanocrystals with widths of ≈40−150 nm and heights of ≈10−25 nm precipitated and grew epitaxially on the substrate in the film. Both the Fe3O4(111) and ITO(001) planes were parallel to the YSZ(001) plane. The Fe3O4(11−2) and -(1−10) planes were parallel to the ITO(100) and -(010) planes, respectively, and the planes connected smoothly at the grain boundary. The contour map of the electron density for the Fe3O4(111) plane by the first-principles electronic structure computation was similar to that for the ITO(001) plane. The [111]-oriented Fe3O4 nanocrystals played the role of spin aligner for charge carriers of the epitaxial ITO film.},
 pages = {1893--1898},
 title = {Magnetoresistance and Microstructure of Magnetite Nanocrystals Dispersed in Indium−Tin Oxide Thin Films},
 volume = {1},
 year = {2009},
 yomi = {コヒキ, シゲミ and ミトウ, マサキ and デグチ, ヒロユキ}
}