@inproceedings{oai:kyutech.repo.nii.ac.jp:00005058,
 author = {Shiba, Yuji and Dashdondog, Erdenebaatar and Sudo, Masaki and Omura, Ichiro and 大村, 一郎},
 book = {2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)},
 month = {Jul},
 note = {Single-Event Burnout (SEB) is a catastrophic failure in the high voltage devices that is initiated by the passage of particles during turn-off state. Previous papers reported that SEB failure rate increases sharply when applied voltage exceeds a certain threshold voltage. On the other hand, the high voltage devices for the artificial satellite have been increasing. In space, due to increase flux of particle, it is predicted that SEB failure rate will be higher. In this paper, we proposed the failure rate calculation method for high voltage devices based on SEB cross section and flux of particles. This formula can calculate the failure rate at space level and terrestrial level depending on the applied voltage of the high voltage devices., 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), May 28 2017-June 1 2017, Sapporo, Japan},
 pages = {167--170},
 publisher = {IEEE},
 title = {Formulation of Single Event Burnout Failure Rate for High Voltage Devices in Satellite Electrical Power System},
 year = {2017},
 yomi = {オオムラ, イチロウ}
}