{"_buckets": {"deposit": "d3af53e5-b6cb-4357-9501-bcb23d401bf5"}, "_deposit": {"created_by": 3, "id": "5079", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "5079"}, "status": "published"}, "_oai": {"id": "oai:kyutech.repo.nii.ac.jp:00005079", "sets": ["24"]}, "author_link": ["20454", "20455", "16176", "20456", "20453", "20457"], "item_21_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2014-08-10", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "9-10", "bibliographicPageEnd": "1900", "bibliographicPageStart": "1897", "bibliographicVolumeNumber": "54", "bibliographic_titles": [{"bibliographic_title": "Microelectronics reliability"}]}]}, "item_21_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "This paper proposes a new short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, A/D converters, and a D/A converter is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method.", "subitem_description_type": "Abstract"}]}, "item_21_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "ESREF 2014, 25th EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES,FAILURE PHYSICS AND ANALYSIS, Sep 29–Oct 3, 2014, Technische Universität Berlin", "subitem_description_type": "Other"}]}, "item_21_description_60": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_description": "Journal Article", "subitem_description_type": "Other"}]}, "item_21_publisher_7": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_21_relation_12": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.microrel.2014.07.083", "subitem_relation_type_select": "DOI"}}]}, "item_21_rights_13": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (c) 2014 Elsevier Ltd. All rights reserved."}]}, "item_21_select_59": {"attribute_name": "査読の有無", "attribute_value_mlt": [{"subitem_select_item": "yes"}]}, "item_21_source_id_10": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA11538014", "subitem_source_identifier_type": "NCID"}]}, "item_21_source_id_8": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0026-2714", "subitem_source_identifier_type": "ISSN"}]}, "item_21_text_36": {"attribute_name": "著者所属", "attribute_value_mlt": [{"subitem_text_value": "Department of Biological Functions and Engineering, Kyushu Institute of Technology"}, {"subitem_text_value": "Department of Electrical Engineering and Electronics, Kyushu Institute of Technology"}, {"subitem_text_value": "Department of Electrical Engineering and Electronics, Kyushu Institute of Technology"}, {"subitem_text_value": "Department of Electrical Engineering and Electronics, Kyushu Institute of Technology"}, {"subitem_text_value": "The International Centre for the Study of East Asian Development (ICSEAD)"}, {"subitem_text_value": "Department of Electrical Engineering and Electronics, Kyushu Institute of Technology"}]}, "item_21_text_63": {"attribute_name": "連携ID", "attribute_value_mlt": [{"subitem_text_value": "5588"}]}, "item_21_version_type_58": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Hasegawa,  K."}], "nameIdentifiers": [{"nameIdentifier": "20453", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamamoto,  K."}], "nameIdentifiers": [{"nameIdentifier": "20454", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yoshida,  H."}], "nameIdentifiers": [{"nameIdentifier": "20455", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hamada,  K."}], "nameIdentifiers": [{"nameIdentifier": "20456", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tsukuda,  M."}], "nameIdentifiers": [{"nameIdentifier": "20457", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Omura,  I."}], "nameIdentifiers": [{"nameIdentifier": "16176", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "10510670", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000010510670/"}, {"nameIdentifier": "7003814580", "nameIdentifierScheme": "Scopus著者ID", "nameIdentifierURI": "https://www.scopus.com/authid/detail.uri?authorId=7003814580"}, {"nameIdentifier": "69", "nameIdentifierScheme": "九工大研究者情報", "nameIdentifierURI": "https://hyokadb02.jimu.kyutech.ac.jp/html/69_ja.html"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-08-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "nperc41.pdf", "filesize": [{"value": "274.9 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 274900.0, "url": {"label": "nperc41.pdf", "url": "https://kyutech.repo.nii.ac.jp/record/5079/files/nperc41.pdf"}, "version_id": "26f3a613-d1fd-4384-b24e-bbd36e2687e4"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Insulated-Gate Bipolar Transistors (IGBTs)", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Short-circuit protection", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Power electronic converters", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Short-Circuit Protection for an IGBT with Detecting the Gate Voltage and Gate Charge", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Short-Circuit Protection for an IGBT with Detecting the Gate Voltage and Gate Charge"}]}, "item_type_id": "21", "owner": "3", "path": ["24"], "permalink_uri": "http://hdl.handle.net/10228/00006291", "pubdate": {"attribute_name": "公開日", "attribute_value": "2017-08-21"}, "publish_date": "2017-08-21", "publish_status": "0", "recid": "5079", "relation": {}, "relation_version_is_last": true, "title": ["Short-Circuit Protection for an IGBT with Detecting the Gate Voltage and Gate Charge"], "weko_shared_id": 3}