@article{oai:kyutech.repo.nii.ac.jp:00005220,
 author = {Luo,  Suning and Kohiki, Shigemi and 古曵, 重美 and Okada,  Koichi and Mitome,  Masanori and Shoji,  Fumiya},
 issue = {27},
 journal = {Materials Letters},
 month = {Nov},
 note = {Surface morphology and microstructure of indium tin oxide (ITO) thin films sputter deposited without heat treatment were obviously different from each other depending on the hydrogen concentration [H] in the working gas. The film surface became smoother with increasing [H] to 1%, but nucleation and growth of grains were apparent above [H] = 1.5%. The width of columnar grains in the ≤200 nm-thick films narrowed from ≈100 nm to ≈50 nm with increasing [H] from 0% to 1.5%. Randomly oriented and agglomerated grains were observed for the film deposited with [H] = 3.6%. Hydrogen added to the working gas induced reduction of the grain size, and then resulted in lowering of the carrier mobility.},
 pages = {2365--2368},
 title = {Effects of hydrogen in working gas for sputter-deposition on surface morphology and microstructure of indium tin oxide thin films grown at room temperature},
 volume = {63},
 year = {2009},
 yomi = {コヒキ, シゲミ}
}