@article{oai:kyutech.repo.nii.ac.jp:00005221,
 author = {Luo,  Suning and Okada,  Koichi and Kohiki, Shigemi and 古曵, 重美 and Tsutsui,  Fuki and Shimooka, Hirokazu and 下岡, 弘和 and Shoji,  Fumiya},
 issue = {6-7},
 journal = {Materials Letters},
 month = {Mar},
 note = {Polycrystalline thin films of indium tin oxide sputter-deposited in the working gas containing hydrogen of 0.3–1.5% exhibited transmittance of ≥ 80% for visible lights and blue-shift of ≥ 0.1 eV in the optical absorption energy. The film deposited in the gas containing hydrogen of 1% demonstrated almost flat temperature-dependent resistivity and the lowest resistivity of ≈ 1.5 × 10− 4 Ω cm at room temperature. The carrier density showed an inverse V-shaped behavior with the maximum at the hydrogen concentration of 1%. The mobility stayed at almost constant below the hydrogen concentration of 1% and dropped rather rapidly above 1%.},
 pages = {641--643},
 title = {Optical and electrical properties of indium tin oxide thin films sputter-deposited in working gas containing hydrogen without heat treatments},
 volume = {63},
 year = {2009},
 yomi = {コヒキ, シゲミ and シモオカ, ヒロカズ}
}