{"created":"2023-05-15T11:58:59.021222+00:00","id":5221,"links":{},"metadata":{"_buckets":{"deposit":"281cdfcf-003b-4aea-baf9-d8cad0d1a222"},"_deposit":{"created_by":3,"id":"5221","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5221"},"status":"published"},"_oai":{"id":"oai:kyutech.repo.nii.ac.jp:00005221","sets":["8:9"]},"author_link":["21052","21055","1489","20416","21057","21053"],"item_21_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-03-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6-7","bibliographicPageEnd":"643","bibliographicPageStart":"641","bibliographicVolumeNumber":"63","bibliographic_titles":[{"bibliographic_title":"Materials Letters"}]}]},"item_21_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Polycrystalline thin films of indium tin oxide sputter-deposited in the working gas containing hydrogen of 0.3–1.5% exhibited transmittance of ≥ 80% for visible lights and blue-shift of ≥ 0.1 eV in the optical absorption energy. The film deposited in the gas containing hydrogen of 1% demonstrated almost flat temperature-dependent resistivity and the lowest resistivity of ≈ 1.5 × 10− 4 Ω cm at room temperature. The carrier density showed an inverse V-shaped behavior with the maximum at the hydrogen concentration of 1%. The mobility stayed at almost constant below the hydrogen concentration of 1% and dropped rather rapidly above 1%.","subitem_description_type":"Abstract"}]},"item_21_description_60":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"Journal 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containing hydrogen without heat treatments"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-04-02T08:46:56.961762+00:00"}