@article{oai:kyutech.repo.nii.ac.jp:00005222,
 author = {Okada,  Koichi and Kohiki, Shigemi and 古曵, 重美 and Luo,  Suning and Sekiba,  Daiichiro and Ishii,  Satoshi and Mitome,  Masanori and Kohno,  Atsushi and Tajiri,  Takayuki and Shoji,  Fumiya},
 issue = {11},
 journal = {Thin Solid Films},
 month = {Mar},
 note = {Thin films of indium tin oxide (ITO) sputter-deposited by dc-plasma containing deuterium on glass substrate without any heat treatments exhibited gradual lowering in electrical resistivity with increasing the deuterium content [D2] in plasma gas by 1% and then demonstrated a jump in resistivity by further increase of [D2] than 1%. X-ray photoelectron spectroscopy revealed that hydroxyl-bonded oxygen in ITO grew continuingly with [D2]. Deuterium positioned at the interstitial site increased almost quantitatively with increasing [D2]. Rutherford backscattering spectroscopy showed gradual reduction in the oxygen content of ITO with increasing [D2] by 1% and then demonstrated an abrupt increase of the oxygen content with the increase of [D2] than 1%. The films with [D2] < 1% were oxygen deficient, but those with [D2] > 1% were excess of oxygen. The most oxygen deficient film of [D2] = 1% was the most conductive. Behavior in the resistivity with [D2] looks parallel to that in the oxygen content. A lower resistivity of the films corresponded well to oxygen vacancy rather than hydrogen interstitial.},
 pages = {3557--3561},
 title = {Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films},
 volume = {519},
 year = {2011},
 yomi = {コヒキ, シゲミ}
}